有限元结合纳米压痕法确定ZnO薄膜的压电系数  

Determination of Piezoelectric Constants of ZnO Thin Film by Combining Finite Element Method and Nanoindentation Test

作　　者：刘伟 吴远志[1] 叶拓 邓彬[1] 郑学军[2] LIU Wei;WU Yuanzhi;YE Tuo;DENG Bin;ZHENG Xuejun(National Joint Engineering Laboratory of Automobile Pump Parts Design and Manufacturing,Hunan Institute of Technology,Hengyang 421002,China;School of Mechanical Engineering,Xiangtan University,Xiangtan 411105,China)

机构地区：[1]湖南工学院汽车泵类零部件设计制造技术国家地方联合工程实验室,湖南衡阳421002 [2]湘潭大学机械工程学院,湖南湘潭411105

出　　处：《材料科学与工程学报》2021年第1期96-100,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51501061);教育部创新团队滚动资助项目(IRT-14R48);湖南省教育厅科学研究资助项目(17C0436);湖南工学院科学研究资助项目(2017HY013)。

摘　　要：为准确表征横观各向同性ZnO薄膜材料的压电性能,以沉积在硅基底上的ZnO薄膜为研究对象,结合有限元法和纳米压痕法确定了ZnO薄膜的压电系数。正向分析,用ABAQUS软件的压电模块模拟了纳米压痕实验,分别确定了薄膜压电系数与最大加载力、加载曲线指数之间的无量纲方程。反向分析,对ZnO薄膜/硅基底体系进行纳米压痕实验,将实验最大加载力和加载曲线指数代入无量纲方程,确定ZnO薄膜的压电系数为e15=-0.40C/m2,e31=-0.43C/m2和e33=1.20C/m2。本结论对ZnO薄膜的实际应用具有一定的指导意义。In order to characterize the piezoelectric property of the transversely isotropic ZnO thin film,piezoelectric constants of the ZnO thin film deposited on the silicon substrate were determined by combining thenite element method and nanoindentation.In the forward analysis,the piezoelectric indentation modes of ABAQUS software were used to simulate the nanoindentation tests of the thin film/substrate system,and two dimensionless equations were established to describe the influence of the piezoelectric constants to the maximum indentation loads and loading curve exponents.In the reverse analysis,nanoindentation tests were implemented on ZnO thin film/silicon substrate system,then the experimental dates were substituted into the dimensionless equations to determine the piezoelectric constants of the ZnO thin film.The corresponding values were:e15=-0.40 C/m2,e31=-0.43 C/m2 and e33=1.20 C/m2.Result of this study is instructive in the practical application of ZnO thin film.

关 键 词：ZNO薄膜 压电系数 横观各项同性 有限元法 纳米压痕 

分 类 号：TB381[一般工业技术—材料科学与工程]