大功率单路和功率合成式100-115GHz肖特基平衡式二倍频器  

High power single and power-combined 100~115 GHz Schottky balanced doublers

作　　者：田遥岭 黄昆[1,2] 岑冀娜 唐川云[1] 林长星 张健[3] TIAN Yao-Ling;HUANG Kun;CEN Ji-Na;TANG Chuan-Yun;Lin Chang-Xing;ZHANG Jian(Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]中国工程物理研究院微系统与太赫兹研究中心,四川成都610200 [2]中国工程物理研究院电子工程研究所,四川绵阳621900 [3]电子科技大学电子科学与工程学院,四川成都611731

出　　处：《红外与毫米波学报》2021年第1期13-18,共6页Journal of Infrared and Millimeter Waves

基　　金：the National Key R&D Program of China Grant(2018YFB1801504);President Funding of China Academy of Engineering Physics with No.YZJJLX2018009。

摘　　要：研究了基于肖特基二极管的单路和功率合成式110 GHz大功率平衡式二倍频器。单路倍频器电路具有33%的峰值测试效率,且其工作带宽超过13.6%。另外,采用了不同的双路合成结构来实现两种不同的合成式110 GHz倍频器。该功率合成式倍频器在两只127μm厚的ALN基片上焊接了四个分立的肖特基二极管。在800 mW的驱动功率下,两种合成式倍频器都测得了大于200 mW的输出功率,证明了利用该合成式倍频结构可实现更高输出功率。The research on high power 110 GHz single and power-combined frequency doublers based on discrete diodes is presented in this paper.The doubler with a single Schottky diode circuit has a measured peak efficiency of 33%and bandwidth over 13.6%.Meanwhile,two different architectures with two single devices adding inphase have been utilized to realize the power-combined doublers.The combined doubler features four discrete Schottky diodes with twelve junctions altogether soldered on two 127μm-thick ALN substrates.Both devices have demonstrated output powers more than 200 mW with a pumping power over 800 mW and are capable of providing more power for higher driven power.

关 键 词：110 GHz 平衡式二倍频 肖特基 功率合成 

分 类 号：TN771[电子电信—电路与系统]