具有带外抑制特性的Ka波段低功耗低噪声放大器  

Ka-Band Low Power Consumption and Low Noise Amplifier with Out-of-Band Suppression Characteristic

作　　者：曾志[1] 李远鹏 陈长友 Zeng Zhi;Li Yuanpeng;Chen Changyou(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050001

出　　处：《半导体技术》2021年第1期36-40,共5页Semiconductor Technology

摘　　要：基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,成功研制了一款30~34 GHz频带内具有带外抑制特性的低功耗低噪声放大器(LNA)微波单片集成电路(MMIC)。该MMIC集成了滤波器和LNA,其中滤波器采用陷波器结构,可实现较低的插入损耗和较好的带外抑制特性;LNA采用单电源和电流复用结构,实现较高的增益和较低的功耗。测试结果表明,该MMIC芯片在30~34 GHz频带内,增益大于28 dB,噪声系数小于2.8 dB,功耗小于60 mW,在17~19 GHz频带内带外抑制比小于-35 dBc。芯片尺寸为2.40 mm×1.00 mm。该LNA MMIC可应用于毫米波T/R系统中。A 30-34 GHz low power consumption and low noise amplifier(LNA)monolithic microwave integrated circuit(MMIC)with out-of-band suppression characteristic was successfully developed based on the 0.15μm GaAs pseudomorphic high electron mobility transistor(PHEMT)process.The MMIC integrated a filter and a LNA.The filter adopted notch filter structure to achieve a lower insertion loss and a better out-of-band suppression characteristic.The LNA adopted single power supply and current reuse structure to achieve a higher gain and a lower power consumption.The test results show that in the 30-34 GHz band range,the MMIC chip achieves the gain of greater than 28 dB,the noise figure of less than 2.8 dB,the power consumption of less than 60 mW and the out-of-band rejection ratio of less than-35 dBc in 17-19 GHz frequency band.The chip size is 2.40 mm×1.00 mm.The LNA MMIC can be applied to the millimeter wave T/R system.

关 键 词：低噪声放大器(LNA) 微波单片集成电路(MMIC) GaAs赝配高电子迁移率晶体管(PHEMT) 带外抑制 电流复用技术 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.3