P波段3kW GaN功率器件的研制  

Research and Development of P-Band 3 kW GaN Power Devices

作　　者：高永辉[1] 徐守利[1] 银军[1] 赵夕彬[1] 陈欣华 黄雒光[1] 崔玉兴[1] Gao Yonghui;Xu Shouli;Yin Jun;Zhao Xibin;Chen Xinhua;Huang Luoguang;Cui Yuxing(The 13th Research Institute,CETC、Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第1期59-63,共5页Semiconductor Technology

摘　　要：介绍了一款高压高功率GaN功率器件及其匹配电路。基于国内高压GaN高电子迁移率晶体管(HEMT)的研究基础,选取了GaN HEMT芯片,确定了器件的总栅宽。根据GaN HEMT芯片阻抗,器件内部进行了LC谐振匹配设计,外部采用双边平衡同轴巴伦进行推挽匹配设计。散热方面通过改善封装管壳热沉材料提高热导率。最终成功研制出高压、3 kW的GaN功率器件,该器件在工作电压为60 V、工作频率为0.35~0.45 GHz、脉宽为300μs、占空比为10%条件下,频带内输出功率大于3 kW、功率增益大于16 dB、功率附加效率大于71%、抗负载失配能力不小于10∶1。A high voltage and high power GaN power device and its matching circuit was introduced.Based on the research foundation of domestic high voltage GaN high electron mobility transistor(HEMT),the GaN HEMT chip was selected and the total gate width of the device was determined.According to the impedance of GaN HEMT chip,the LC resonance matching design was carried out inside the device.While the bilateral balanced coaxial balun and push-pull circuit was used in the outside matching network.In the aspect of heat dissipation,the thermal conductivity was improved by enhancing the heat sink material of the package.Finally,a high-voltage 3 kW GaN power device was successfully developed.The device shows an output power of more than 3 kW,a power gain of more than 16 dB and a power added efficiency of more than 71%in the band of 0.35-0.45 GHz under the conditions of 60 V working voltage,300μs pulse width and 10%duty cycle.The load mismatch capability of the device is not less than 10∶1.

关 键 词：GaN高电子迁移率晶体管(HEMT) 内匹配 高功率 高效率 P波段 

分 类 号：TN386[电子电信—物理电子学] TN304.23