S波段射频前端小型化的设计与实现  

Miniaturization design and implementation of the S band front-end module

作　　者：张毅[1] 马兴胜[1] ZHANG Yi;MA Xingsheng(Nanjing Research Institute of Electronics Technology,Nanjing Jiangsu 210039,China)

机构地区：[1]南京电子技术研究所,江苏南京210039

出　　处：《太赫兹科学与电子信息学报》2020年第6期1147-1150,共4页Journal of Terahertz Science and Electronic Information Technology

摘　　要：随着相控阵雷达技术的发展,射频前端作为T/R组件的核心器件,向高性能、高可靠、多功能、小型化及低成本趋势不断发展。本文使用GaN功率器件和微组装技术,结合几种关键器件小型化设计的方法,设计了S波段小型化射频前端。在6~8 dBm输入的条件下,发射通道输出功率达到200 W,效率达到50%以上;接收通道可实现30 dB的增益和1.5 dB噪声系数的设计指标。该技术已广泛用在射频相关产品中。With the development of phased array radar technology,as the key device of T/R module,front-end module is evolving towards the directions of high performance,high reliability,multi-function,miniaturization and low cost.The module is implemented by microwave hybrid integrated process and micro-assembly technology.In the case of input power of 6 to 8 dBm,the output power of 200 W is achieved,with efficiency as high as 50%.The gain of the receiving channel is larger than 30 dB and the Noise Figure(NF)is less than 1.5 dB in defined bandwidth.Test results show that the module performance is up to the specifications and sufficient to meet the requirements of practical application.

关 键 词：微组装 GaN功率管 射频前端小型化 限幅低噪放 

分 类 号：TN803.5[电子电信—信息与通信工程]