基于水冷SVG的IGBT损耗及结温研究  

Research on IGBT Loss and Junction Temperature Based on Water-cooled SVG

作　　者：陈炜炜 刘春松[1] 杨轶成[1] 陈可[1] CHEN Wei-wei;LIU Chun-song;YANG Yi-cheng;CHEN Ke(Guodian Nanjing Automation Co.,Ltd.,Nanjing 2100321 China)

机构地区：[1]国电南京自动化股份有限公司,江苏南京210032

出　　处：《电力电子技术》2021年第1期137-140,共4页Power Electronics

摘　　要：此处基于水冷型静止无功发生装置(SVG),选用两种绝缘栅双极型晶体管(IGBT),对其进行负载对比性实验。根据实验所得数据,结合IGBT自带仿真软件,对仿真所得数据进行分析处理,计算两种IGBT的损耗及结温,综合比较两种IGBT的性能,为IGBT选型提供一种研究方法,有助于IGBT研究的进一步深入。Based on a water-cooled static var generator(SVG),two types of insulate-gate bipolar transistor(IGBT) are selected for load comparison experiments.Based on the experimental data and the IGBT’s own simulation software,the data from the simulation is analyzed and calculated,the loss and junction temperature of the two IGBTs are calculated,and the performance of the two IGBTs is comprehensively compared to provide a research method for IGBT selection,which will help further the research of IGBTs.

关 键 词：绝缘栅双极型晶体管 静止无功发生装置 损耗 结温 

分 类 号：TN32[电子电信—物理电子学]