相变材料Ge_(2)Sb_(2)Te_(5)的X射线辐照致变效应研究  

Study on X-ray irradiation induced effect of phase-change material Ge_(2)Sb_(2)Te_(5)

作　　者：何佩谣 赵越 刘宇[1] 王波[3] 朱效立[1] HE Peiyao;ZHAO Yue;LIU Yu;WANG Bo;ZHU Xiaoli(Key laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049 [3]中国科学院高能物理研究所,北京100049

出　　处：《核技术》2021年第3期7-13,共7页Nuclear Techniques

基　　金：国家自然科学基金(No.U1832217、No.61774166)资助。

摘　　要：相变材料Ge_(2)Sb_(2)Te_(5)由于其独特的光学和电学性质,在光学记录、数据存储等方面具有广泛的应用。在航空航天、安检扫描等一些特定环境中,X射线辐照会使得相变材料发生结构和性能的变化,研究Ge_(2)Sb_(2)Te_(5)在X射线辐照下的结构变化就非常必要。对Si衬底上50 nm厚的Ge_(2)Sb_(2)Te_(5)薄膜材料采用X射线进行不同时间的照射,并利用高分辨率X射线光电子能谱(X-ray Photoelectron Spectroscopy,XPS)分析了Ge_(2)Sb_(2)Te_(5)的化学形态以及结构的变化。结果表明:随辐照时间的增加,Ge_(2)Sb_(2)Te_(5)薄膜材料中各元素化学状态及键合方式发生了改变,被氧化的程度也逐渐增强,表现为GeO_2的XPS峰强度增强,Sb_(2)O_(3)、TeO_2分别转变为更高金属价态氧化物Sb_(2)O_(5)和TeO_(3)。研究还确定了Ge_(2)Sb_(2)Te_(5)的极限照射时间为9 h,长时间的辐照作用,使得材料表面受到严重破坏,形成大量孔洞。通过研究Ge_(2)Sb_(2)Te_(5)在X射线辐照下的结构变化,为Ge_(2)Sb_(2)Te_(5)相变材料和器件的抗辐照机制及辐射加固技术的研究提供参考。[Background]Due to its unique optical and electrical properties,phase-change material Ge_(2)Sb_(2)Te_(5)(GST)has been widely used in optical recording,data storage,etc.In some specific environments,such as the space and security inspection channels,X-ray irradiation can change the structure and properties of GST.[Purpose]This study aims to investigate the X-ray irradiation induced effect of GST.[Methods]The 50 nm thick GST films sputtered on Si substrates were irradiated for different times by an X-ray source of the synchrotron radiation facility,and the changes in chemical states and structures of the films were analyzed by using X-ray photoelectron spectroscopy(XPS).[Results]With the increasing of irradiation time,the peak intensity of GeO2 is enhanced,and Sb_(2)O_(3) and TeO_(2) are transformed into higher metal oxides Sb2O5 and TeO3,respectively.Which indicated the chemical states and the bonds of each element changed,and the degree of oxidation increases.After 9-h irradiation,a large number of holes can be seen on the film surface.It means that the limit of irradiation time of Ge_(2)Sb_(2)Te_(5)is 9 h.[Conclusions]X-ray irradiation on GST is an effective method to alter the chemical states and structures of GST,it provides a reference for the research of radiation resistance mechanism and radiation hardening technology of GST.

关 键 词：同步辐射 Ge_(2)Sb_(2)Te_(5) X射线光电子能谱 化学键 

分 类 号：TL929[核科学技术—核燃料循环与材料]