氧化钽阻变存储器的初始化电压调制  

Initialization voltage modulation of tantalum oxide resistive random access memory

作　　者：官郭沁 邹荣 左青云[3] 田盼 吕杭炳[4] 田志 王奇伟 曾敏 杨志 GUAN Guoqin;ZOU Rong;ZUO Qingyun;TIAN Pan;LÜ Hangbing;TIAN Zhi;WANG Qiwei;ZENG Min;YANG Zhi(Key Laboratory of Thin Film and Microfabrication(Ministry of Education),Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Huali Microelectronics Co.,Ltd.,Shanghai 201314,China;Shanghai Integrated Circuit R&D Center Co.,Ltd.,Shanghai 201210,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]上海交通大学,电子信息与电气工程学院,微纳电子学系,薄膜与微细技术教育部重点实验室,上海200240 [2]上海华力微电子有限公司,上海201314 [3]上海集成电路研发中心有限公司,上海201210 [4]中国科学院微电子研究所,北京100029

出　　处：《现代电子技术》2021年第6期1-5,共5页Modern Electronics Technique

基　　金：国家重点研发计划(2018YFB0407500)。

摘　　要：采用物理气相沉积和等离子体氧化工艺制备氧化钽阻变薄膜,利用X射线光电子能谱分析技术对阻变薄膜进行表征。系统研究等离子体氧化时间和阻挡层厚度对初始化电压的影响。研究表明,器件初始化电压随氧化时间增加而增大,同时增加阻挡层厚度可有效降低初始化电压。基于40 nm互补金属氧化物半导体量产工艺平台,成功地在40 nm晶体管后段集成了阻变单元,制备了氧化钽阻变存储器,其初始化电压为3.3 V,置位/复位电压在1.8 V以内。The tantalum oxide resistive thin film is prepared by the physical vapor deposition and plasma oxidation,and the resistive thin film is characterized by means of the X⁃ray photoelectron spectroscopy technology.The effects of plasma oxidation time and barrier layer thickness on the initialization voltage are studied systematically.The results show that the initialization voltage of the device increases with the increase of oxidation time,and the increase of the thickness of the barrier layer can effectively reduce the initialization voltage.Based on the 40 nm complementary metal oxide semiconductor mass production technology platform,a resistive cell is successfully integrated at the back end of the 40 nm transistor,and the tantalum oxide resistive random access memory is prepared,with which the initialization voltage is 3.3 V and the setting/resetting voltage is within 1.8 V.

关 键 词：氧化钽 阻变存储器 电压调制 初始化电压 阻变单元 置位/复位电压 

分 类 号：TN389-34[电子电信—物理电子学]