GaAs基980 nm高功率半导体激光器的研究进展  

Research Progress of GaAs Based 980 nm High Power Semiconductor Lasers

作　　者：胡雪莹 董海亮[1] 贾志刚 张爱琴 梁建[3] 许并社[1,4] HU Xueying;DONG Hailiang;JIA Zhigang;ZHANG Aiqin;LIANG Jian;XU Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China;College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China;Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi’an 710021, China)

机构地区：[1]太原理工大学,新材料界面科学与工程教育部重点实验室,太原030024 [2]太原理工大学轻纺工程学院,太原030024 [3]太原理工大学材料科学与工程学院,太原030024 [4]陕西科技大学,材料原子分子科学研究所,西安710021

出　　处：《人工晶体学报》2021年第2期381-390,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61904120,21972103,61604104,51672185);国家重点研发计划(2016YFB0401803);山西省基础研究项目(201801D221124,201801D121101,201901D111111,201901D211090,201601D202029);山西省重点研发项目(201803D31042)。

摘　　要：GaAs基980 nm半导体激光器在材料加工、通信和医疗等领域有着重要应用。应变量子阱结构的出现提高了GaAs基半导体激光器的转换效率、输出功率和可靠性。本文综述了高功率GaAs基量子阱激光器历史发展,介绍了高功率半导体激光器的外延结构、芯片结构和封装结构设计,重点阐述了影响高功率GaAs基量子阱激光器光电性能、散热和实际应用的问题。针对以上问题讨论了相应解决方案及研究成果,并指出了各个方案的不足之处和改进方向。最后,总结了高功率半导体激光器的发展现状,对高功率半导体激光器发展方向进行了展望。980 nm GaAs based semiconductor lasers have important applications in the fields of materials processing,communication,medical treatment and so on.The conversion efficiency,output power and reliability of GaAs based semiconductor lasers have been improved because of the emergence of strain quantum well.Historical development of GaAs based quantum well laser are reviewed and epitaxial structure design,chip design and chip encapsulation design are introduced in this paper.More importantly,the problems of effect on optical-electrical performances,heat-sink cooling and practical application are discussed emphatically for high power GaAs based quantum well laser.The proposed solutions and achievements are discussed based on the above problems,the shortcomings and improvement directions of each solution are pointed out.Finally,the development status of high power semiconductor lasers is summarized and the development direction is prospected.

关 键 词：GaAs基 高功率 980 nm半导体激光器 应变量子阱结构 转换效率 光电性能 

分 类 号：O471[理学—半导体物理]