Self-assembled monolayers enhance the performance of oxide thin-film transistors  

作　　者：Wensi Cai Zhigang Zang Liming Ding 

机构地区：[1]Key Laboratory of Optoelectronic Technology&Systems(MoE),Chongqing University,Chongqing 400044,China [2]Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China

出　　处：《Journal of Semiconductors》2021年第3期7-10,共4页半导体学报（英文版）

基　　金：W.Cai and Z.Zang thank National Natural Science Foundation of China(11974063);Natural Science Foundation of Chongqing(cstc2020jcyj-jqX0028);China Postdoctoral Science Foundation(2020M683242);and Chongqing Special Postdoctoral Science Foundation(cstc2020jcyj-bshX0123)for financial support.L.Ding thanks National Key Research and Development Program of China(2017YFA0206600);National Natural Science Foundation of China(51773045,21772030,51922032,and 21961160720)for financial support.

摘　　要：Thin-film transistors(TFTs)based on oxide semiconductors have gained a lot of attention in applications such as displays and sensors particularly in recent years due to the advantages of oxide semiconductors like high mobility,good uniformity over large area and low deposition temperature[1−4].However,the defects/traps at dielectric/channel interface and top surface of oxide TFTs might dramatically degrade device performance including current on/off ratio,mobility and most importantly stability[5,6],making it quite urgent to systematically make effective interface engineering to improve TFT performance.

关 键 词：TRANSISTORS FILM PERFORMANCE 

分 类 号：TN321.5[电子电信—物理电子学]