基于原子层沉积技术制备氧化钽薄膜及其特性研究  

Preparation of Tantalum Oxide Thin Films by Atomic Layer Deposition Technique and Their Property Characterization

作　　者：明帅强 文庆涛 高雅增 闫美菊 卢维尔[1,2,4] 夏洋 MING Shuaiqiang;WEN Qingtao;GAO Yazeng;YAN Meiju;LU Weier;XIA Yang(Microelectronic Instrument and Equipment Research Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 101407,China;College of Science,Beijing Jiaotong University,Beijing 100044,China;Beijing Research Center of Engineering and Technology of Instrument and Equipment for Microelectronics Fabrication,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所微电子仪器设备研究中心,北京100029 [2]中国科学院大学,北京101407 [3]北京交通大学理学院,北京100044 [4]北京市微电子制备仪器设备工程技术研究中心,北京100029

出　　处：《材料导报》2021年第6期6042-6047,共6页Materials Reports

基　　金：国家重点研发计划(2018YFF0109100);国家自然科学基金青年科学基金(61604175);国家自然科学基金(61427901)。

摘　　要：本工作以单晶硅为衬底,乙醇钽和水分别为钽源和氧源,研究原子层沉积技术制备氧化钽薄膜的工艺,考察了乙醇钽温度、衬底温度、脉冲时间等工艺条件对氧化钽薄膜的生长速率、粗糙度和表面形貌等特性的影响。通过椭偏仪、原子力显微镜、扫描电子显微镜以及高分辨X射线光电子能谱测试分析表明,制备获得的氧化钽薄膜表面光滑,粗糙度小于1 nm,薄膜生长速率受工艺参数的影响较大,其中在乙醇钽源瓶温度170℃、脉冲时间0.1 s以及衬底温度200℃时,氧化钽的生长速率为0.253/cycle。本工作基于原子层沉积高性能氧化钽薄膜的工艺研究,将对氧化钽薄膜在介质材料、存储介质以及光学涂层等领域的应用奠定基础。In this paper,the preparation and properties of tantalum oxide thin films by atomic layer deposition technology were studied using single crystal silicon as substrate,tantalum ethoxide and deionized water as tantalum and oxygen source,respectively.The effects of tantalum ethoxide source bottle temperature,substrate temperature and tantalum ethoxide pulse time on the growth rate,roughness and surface morphology of the obtained tantalum oxide thin films were investigated.The results of ellipsometry,atomic force microscopy,scanning electron microscopy and high resolution X-ray photoelectron spectroscopy show that,when tantalum ethoxide was using as the tantalum source,the surface of obtained tantalum oxide thin film are smooth and the roughness is less than 1 nm.The film growth rate is greatly depended on the process conditions.The best overall performance of tantalum oxide thin film was prepared at tantalum ethoxide source temperature,the pulse time and the substrate temperature of 170℃,0.1 s and 200℃,respectively.In this condition,the film growth rate is 0.253A/cycle.The investigation of the preparation process of high performance tantalum oxide thin film by atomic layer deposition technique based on tantalum ethoxide would lay a foundation for the application in the field of dielectric material,storage medium and optical coating.

关 键 词：原子层沉积 氧化钽薄膜 乙醇钽 生长速率 粗糙度 

分 类 号：TB321[一般工业技术—材料科学与工程]