高质量石墨烯的化学气相沉积制备工艺参数研究  

Research on the preparation process parameters of high quality graphene by CVD method

作　　者：白清顺[1] 郭万民 何成慧 张智豪 李玉婷 郭永博[1] Bai Qing-shun;Guo Wan-min;He Cheng-hui;Zhang Zhi-hao;Li Yu-ting;Guo Yong-bo(School of Mechatronics Engineering,Harbin Institute of Technology,Heilongjiang Harbin 150001,China)

机构地区：[1]哈尔滨工业大学机电工程学院,黑龙江哈尔滨150001

出　　处：《炭素技术》2020年第6期31-34,共4页Carbon Techniques

基　　金：国家自然科学基金(51775146,51535003)。

摘　　要：石墨烯的制备工艺参数和条件对其性能有直接影响,获得可靠有效的制备工艺条件对提升石墨烯的质量具有重要的意义。虽然,化学气相沉积(CVD)已经成为制备石墨烯的有效方法,然而采用化学气相沉积法制备石墨烯的工艺参数十分苛刻,受到生长温度、时间、气体流量等多种因素的影响。本文采用化学气相沉积方法,在晶体铜表面制备石墨烯薄膜。给出了高温低压条件下CVD法制备石墨烯工艺流程,分析了石墨烯生长过程中生长温度、生长时间、CH4流量和H2流量对石墨烯沉积质量的影响。在研究石墨烯沉积质量影响规律的基础上,确定了CVD法制备石墨烯薄膜的工艺条件,并成功地在晶体铜表面制备出高质量的石墨烯。The preparation parameters and conditions of graphene have a direct impact on its performance. It is of great significance to obtain reliable and effective preparation conditions for improving the quality and performance of graphene. Although chemical vapor deposition(CVD) has become an effective method for the preparation of graphene, the process parameters for the preparation of graphene by CVD are very demanding, which are affected by many factors such as growth temperature, time, and gas flow. In this paper, graphene films are fabricated on the surface of crystal copper by chemical vapor deposition. The CVD process of graphene preparation under the high temperature and low pressure is given. The effects of growth temperature, growth time, CH4 flow rate and H2 flow rate on the deposition quality of graphene are analyzed. On the basis of summing up the influence rule of graphene deposition quality, the process conditions for preparing graphene film by CVD are determined, and high quality graphene is successfully fabricated on the surface of crystal copper.

关 键 词：石墨烯 化学气相沉积 晶体铜 生长条件 

分 类 号：TQ127.11[化学工程—无机化工]