基于GaAs工艺超宽带低噪声放大器设计  

Design of ultra-wideband low noise amplifier based on GaAs process

作　　者：黄国皓 黄玉兰 杨小峰 HUANG Guohao;HUANG Yulan;YANG Xiaofeng(School of Electronic Engineering,Xi’an University of Posts and Telecommunications,Xi’an 710121,China)

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《传感器与微系统》2021年第3期84-86,92,共4页Transducer and Microsystem Technologies

摘　　要：为有效扩展低噪声放大器的带宽,基于分布式放大器基本原理,使用0.15μm GaAs pHEMT工艺,研制了一种超宽带微波单片集成低噪声放大器。选用5级分布式拓扑,每级使用共源共栅结构并添加去耦电容,提高放大器增益,改善增益平坦度,拓展放大器工作带宽。仿真结果表明:所设计的放大器在0.9~30 GHz内,增益为15±1 dB,最大噪声系数小于3.5 dB,最低噪声系数仅为1.7 dB,输入和输出回波损耗均小于-10 dB,放大器工作电压为2.5 V,电流消耗71.7 m A,1 dB压缩点输出功率大于10 dBm,芯片面积为2.1 mm×1.24 mm。In order to extend the bandwidth of low noise amplifier effectively,based on the distributed amplifier principle,an ultra-wideband microwavemonolithic integrated low noise amplifier is proposed using 0.15μm GaAs pHEMT process.The amplifier uses 5-level distributed topology,each stage uses cascode structure and adds the decoupling capacitor,increass the amplifier gain,improves the gain flatness and expands the working bandwidth of the amplifier.In the frequency band of 0.9~30 GHz,the simulation results show that the gain is 15±1 dB,themaximum noise coefficient is lower than 3.5 dB,and the minimum noise coefficient is 1.7 dB,boththe input and output return loss are less than-10 dB,the amplifier operation voltage is 2.5 V,current consumption is 71.7 mA,the output power of 1 dB compression point is greater than 10 dBm,and the chip area is 2.1 mm×1.24 mm.

关 键 词：分布式放大器 GaAs pHEMT工艺 超宽带 单片微波集成电路 

分 类 号：TN722.3[电子电信—电路与系统]