物理气相沉积铜膜本征应力形成机制及影响因素研究进展  

Recent Research Progress of Generation Mechanism and Influence Factors of Intrinsic Stress in Vacuum Deposited Copper Films

作　　者：王兰喜[1] 张凯锋[1] 王虎[1] 王艺[1] 熊玉卿[1] 吴春华[1] 李坤[1] 周晖[1] WANG Lanxi;ZHANG Kaifeng;WANG Hu;WANG Yi;XIONG Yuqing;WU Chunhua;LI Kun;ZHOU Hui(Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China)

机构地区：[1]兰州空间技术物理研究所真空技术与物理重点实验室,兰州730000

出　　处：《真空与低温》2021年第2期103-114,共12页Vacuum and Cryogenics

基　　金：中国航天科技集团有限公司共性工艺研究项目(GXGY2018-05);真空技术与物理重点实验室基金(614220704030717)。

摘　　要：在物理气相沉积铜膜的过程中,具有高表面迁移率的铜原子在基底表面以Volmer-Weber方式生长,铜膜通常会产生显著的本征应力(压应力或张应力),宏观表现出铜膜/基底材料整体的弯曲变形,这对后期铜膜在较高精度下的加工和应用造成不利影响。主要综述了近几年在物理气相沉积铜膜本征应力的形成机制、影响因素等方面的研究进展,讨论降低或消除本征应力的技术途径。In physical vapor deposition of copper films,copper atoms with high surface migration on substrate grows in the way of Volmer-Weber mechanism.Obvious intrinsic stress(compressive stress or tensile stress)usually exists in copper film,leading to deformation of copper film/substrate system as a whole.Intrinsic stress has adverse effect on the precise applications of copper films.Researches about intrinsic stress generation mechanisms,influence factors and so on will be reviewed in this paper.Techniques of decreasing and eliminating intrinsic stress will be discussed and proposed at the same time.

关 键 词：真空镀铜膜 本征应力 形成机制 影响因素 研究进展 

分 类 号：O484[理学—固体物理] TB43[理学—物理]