Vertical GaN Shottky barrier diode with thermally stable TiN anode  

作　　者：Da-Ping Liu Xiao-Bo Li Tao-Fei Pu Liu-An Li Shao-Heng Cheng Qi-Liang Wang 刘大平;李小波;蒲涛飞;李柳暗;成绍恒;王启亮(Department of Physics,Xinxiang University,Xinxiang 453003,China;Institute of Technology and Science,Tokushima University,Tokushima 770-8506,Japan;School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Superhard Material,Jilin University,Changchun 130012,China)

机构地区：[1]Department of Physics,Xinxiang University,Xinxiang 453003,China [2]Institute of Technology and Science,Tokushima University,Tokushima 770-8506,Japan [3]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China [4]State Key Laboratory of Superhard Material,Jilin University,Changchun 130012,China

出　　处：《Chinese Physics B》2021年第3期479-482,共4页中国物理B（英文版）

基　　金：Project supported by the Open Project of State Key Laboratory of Superhard Materials,Jilin University(Grant No.201906);Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics(Grant No.202006);the Science and Technology Program of Ningbo(Grant No.2019B10129).

摘　　要：Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 mΩ·cm2, respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25℃ to 200℃, implying a good thermal stability of Ti N/Ga N contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at Ti N/Ga N interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.

关 键 词：GAN Vertical Schottky barrier diode TIN interface quality 

分 类 号：TN312[电子电信—物理电子学] O469[理学—凝聚态物理]