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作 者:叶向荣 张广第[1] 叶素芳 夏添[1] 周井森 张云峰 廖进 刘俊明 YE Xiang-rong;ZHANG Guang-di;YE Su-fang;XIA Tian;ZHOU Jing-sen;ZHANG Yun-feng;LIAO Jin;LIU Jun-ming(Zhejiang Britech Co.,Ltd.,Quzhou 324004,China;Key Laboratory for Advanced Catalysis Materials of The Ministry of Education,Zhejiang Normal University,Jinhua 321004,China;Jinhua Polytechnic,Jinhua 321007,China)
机构地区:[1]浙江博瑞电子科技有限公司,浙江衢州324004 [2]浙江师范大学先进催化材料教育部重点实验室,浙江金华321004 [3]金华职业技术学院,浙江金华321007
出 处:《现代化工》2021年第1期103-107,112,共6页Modern Chemical Industry
基 金:国家重点研发计划课题(2017YFB04055801)。
摘 要:耐HCl和水协同腐蚀、低二次杂质释出是吸附材料用于HCl电子气体深度除水的先决条件。在考察了一系列工业化硅铝酸盐分子筛的耐蚀性、杂质释出和真实HCl电子气体环境下的深度除水性能后证实,硅铝酸盐分子筛的耐蚀性和除水性能与硅铝摩尔比(SiO_(2)/Al_(2)O_(3)摩尔比)密切相关。硅铝摩尔比为2的分子筛耐蚀性较差,硅铝摩尔比为16~360的分子筛均具有较好的耐蚀性;硅铝摩尔比介于2~300之间的分子筛可将HCl电子气体中约2μL/L水分脱除至130~200 n L/L,除水效率与速度均随硅铝摩尔比增加呈下降趋势。根据上述规律开发的MS-1分子筛可脱除HCl电子气体中的水分至约160 nL/L,MS-1分子筛经改性后则可将水分除至<100 nL/L,且对HCl中的金属离子无显著影响。High resistance to synergistic corrosion of HCl and moisture as well as negligible emission of secondary impurities are essential properties for a qualified adsorbent to dehydrate deeply HCl electronic gas,considering the fact that HCl is highly hydrophilic,and could be triggered to be strongly corrosive and reactive.Herein a number of commercial aluminosilicate molecular sieves are investigated regarding their corrosion resistance,impurity release and deep dehydration performance for real HCl electronic gas.Results indicate that both corrosion-resistance and dehydrating performance of aluminosilicate molecular sieves are closely tied to their silica to alumina(SiO_(2)/Al_(2)O_(3))ratios.A ratio of2 results in poor corrosion resistance whilst those of 16-360 enable excellent corrosion-resistance.Molecular sieves with2-300 of SiO_(2)/Al_(2)O_(3) ratio can reduce around 2μL·L^(-1) of moisture in HCl electronic gas down to 130-200 n L·L^(-1) level.Both the dehydrating efficiency and speed exhibits a downward trend along with the increase of SiO_(2)/Al_(2)O_(3) ratio.Accordingly,MS-1 molecular sieve and its modified version have been developed which are capable of removing the moisture in HCl electronic gas down to around 160 and less than 100 n L·L^(-1),respectively,without significant contribution to metal impurities in HCl.
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