背面通孔工艺对砷化镓滤波器性能的影响  

Effect of the Backside Via-hole on Performance of GaAs Filter

作　　者：彭挺[1] 闫未霞 郭盼盼 强欢 莫中友 陈超 王世伟 孔欣[1] PENG Ting;YAN Weixia;GUO Panpan;QIANG Huan;MO Zhongyou;CHEN Chao;WANG Shiwei;KONG xin(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子工艺技术》2021年第2期70-73,共4页Electronics Process Technology

摘　　要：滤波器作为微波系统中的无源器件,在现代电子通信中具有非常重要的应用。采用砷化镓无源器件集成工艺制作了滤波器,在制作工艺中重点研究了背面通孔工艺对滤波器性能的影响。首先讲述了IPD工艺,然后通过分析背面通孔不同位置的侧向蚀刻,经过测试数据的分析对比,进而说明侧向蚀刻对滤波器性能的影响。通过以上的分析结果,为后续滤波器工艺加工的监控和维护提供了重要的数据基础。As a passive device of microwave circuits,filter plays an increasing role in current electronic communications.The filter employs GaAs integrated passives devises(IPD)fabrication process,and the effect of backside via-hole process on filter performance is studied.Firstly,the IPD process is introduced and then sidewall etching of different position is analyzed.According to the analysis and comparison with measure data,the effect of sidewall etching on the filter performance is demonstrated.Based on above results,it provides important data reference for the monitoring and maintenance of the subsequent filter process monitor and maintenance.

关 键 词：砷化镓 滤波器 背面通孔 侧向蚀刻 

分 类 号：TN605[电子电信—电路与系统]