氮化铝基板上厚膜电阻性能分析  

Performance Analysis of Thick Film Resistance for Aluminum Nitride Substrate

作　　者：郝沄 李创 吴鑫 袁海 任英哲 杨春燕 HAO Yun;LI Chuang;WU Xin;YUAN Hai;REN Yingzhe;YANG Chunyan(Xi’an Microelectronics Technology Institution,Xi’an 710119,China)

机构地区：[1]西安微电子技术研究所,陕西西安710119

出　　处：《电子工艺技术》2021年第2期78-80,87,共4页Electronics Process Technology

基　　金：装备发展预研项目(61409230310)。

摘　　要：在AlN基板上,使用IKTS电阻浆料制作了4种方阻的厚膜电阻,确定了AlN基板用电阻的阻值与设计方数的关系,推算出了不同方数下的电阻设计比例。测试了电阻的温度系数,测量结果均小于150×10^(-6)/℃。使用激光调值机对4种方阻的电阻进行调值,经150 ℃、1 000 h高温存储,阻值变化率<1.5%。Thick film resistors with IKTS four sheet resistance pastes have been prepared on Aluminum Nitride(AlN)substrate.The relationship between resistance and resistor geometry is determined,and the ratio of resistance designing with various sheet resistances is subsequently calculated.Furthermore,the temperature coefficient of resistivity(TCR)for all resistors are measured and the results are all less than 150×10^-6/℃.Then,four sheet resistors are trimmed by laser trimmer,it is found that resistance variation is less than 1.5%after high temperature aging with 1000 hours at 150℃.

关 键 词：ALN 厚膜电阻 电阻设计 温度系数 阻值稳定性 

分 类 号：TN606[电子电信—电路与系统]