基于65nm CMOS工艺的2阶温度补偿全CMOS电压基准源  

A CMOS Voltage Reference with Second-Order Temperature Compensation Based on 65 nm CMOS Process

作　　者：杨晗[1] 侯晨琛 钟泽 谢家志[1] 廖书丹 YANG Han;HOU Chenchen;ZHONG Ze;XIE Jiazhi;LIAO Shudan(The 2Ath Research Institute of China Electronics Technology Group Corp.,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第1期1-4,共4页Microelectronics

基　　金：模拟集成电路国家重点实验室基金资助项目(6142802011503)。

摘　　要：采用65 nm CMOS工艺,设计了一种基于MOS亚阈区特性的全CMOS结构电压基准源。首先利用工作在亚阈值区NMOS管的栅源电压间的差值得到具有特定2阶温度特性的CTAT电压,该CTAT电压的2阶温度特性与PTAT电压2阶温度特性的弯曲方向相反。再通过电流镜技术实现CTAT电压和PTAT电压求和,最终得到具有2阶温度补偿效果的基准输出电压。仿真结果表明,电路可工作在1.1 V到1.5 V电压范围内;在-55℃~160℃范围内,电压基准的温度系数可达5.9×10^(-6)/℃;在1.2 V电源电压下,电路的静态功耗和输出电压值分别为10μW和273.5 mV。Based on a 65 nm CMOS process, a subthreshold MOSFET voltage reference with second-order temperature compensation was designed. The reference generator utilized gate-source voltage difference for CTAT voltage between two NMOS transistors, which both operated in subthreshold region to achieve second-order temperature characteristics. The second-order temperature characteristics of CTAT voltage was opposite to the second-order temperature characteristics of PTAT voltage. By using current mirror technology, the gate-source voltage difference that was complementary to absolute temperature was added to the output of the voltage reference. Simulation results showed that a temperature coefficient of 5.9 ×10^(-6)/℃ at 1.2 V was achieved from-55 ℃ to 160 ℃. The reference generator operated under supply voltage ranging from 1.1 V to 1.5 V with an output voltage of 273.5 mV and a power consumption of 10 μW.

关 键 词：65 nm CMOS工艺 亚阈区 电流镜技术 2阶温度补偿 

分 类 号：TN402[电子电信—微电子学与固体电子学]