22nm FD-SOI 静态随机存储器的可靠性研究  

Reliability Study of 22 nm FD-SOI Static Random Access Memory

作　　者：贺泽 蔡畅[1,2] 赵凯 赵培雄 李东青 刘天奇 刘杰[1] HE Ze;CAI Chang;ZHAO Kai;ZHAO Peixiong;LI Dongqing;LIU Tianqi;LIU Jie(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,P.R.China;University of Chinese Academy of Sciences,Beijing 100049,P.R.China;Shanghai Fudan Microelectronics Group Co.,Ltd.,Shanghai 200433,P.R.China)

机构地区：[1]中国科学院近代物理研究所,兰州730000 [2]中国科学院大学,北京100049 [3]复旦微电子集团股份有限公司,上海200433

出　　处：《微电子学》2021年第1期137-141,共5页Microelectronics

基　　金：国家自然科学基金资助项目(11690041)。

摘　　要：针对22 nm FD-SOI CMOS工艺静态随机存储器(SRAM),研究了工艺角、工作电压、测试温度、总剂量效应对器件性能的影响。通过自动测试设备(ATE),有效地提取了FD-SOI存储器在多种测试环境下的电学性能参数。测试结果表明,不同的工艺角对输出电平和工作状态的影响较小。随着电压的增加,静态电流随之增加,最大工作频率呈现出波动性的变化。器件在-55℃~125℃范围内性能稳定。高频特性在25℃表现最好,低压特性在高温下最优。总剂量累积到3 kGy(Si)时,器件功能仍正常,内核电流与I/O电流均明显增大。FD-SOI SRAM自身优点多,工作稳定性较好,具有极好的应用前景。For the 22 nm FD-SOI static-random-access-memory(SRAM), the effects of the process corner, voltage, temperature, and total dose on the performance of memories were studied. Under various conditions, the electrical parameters of the devices were extracted by the automatic-test-equipment. The test results showed that the process corners had less impact on the devices. When the voltage increased, the standby current increased, and the maximum operating frequency fluctuated. The device was stable within the range of-55 ℃~125 ℃. The high frequency performance was best at 25 ℃, and the low voltage performance was best at high temperature. When the total dose accumulated to 3 kGy(Si), the device function was still normal, and the core current and I/O current increased significantly. FD-SOI SRAM had many advantages, good working stability, and had excellent application prospect.

关 键 词：全耗尽绝缘体上硅 静态随机存储器 可靠性 

分 类 号：TN406[电子电信—微电子学与固体电子学] TN432