透明导电ZTGO薄膜的制备及其光电性能研究  

Fabrication and opto-electronic performance of transparent conducting ZTGO thin films

作　　者：钟志有[1,2] 田雨 朱雅 ZHONG Zhiyou;TIAN Yu;ZHU Ya(College of Electronic Information Engineering,South-Central University for Nationalities,Wuhan 430074,China;Hubei Key Laboratory of Intelligent Wireless Communications,South-Central University for Nationalities,Wuhan 430074,China)

机构地区：[1]中南民族大学电子信息工程学院,武汉430074 [2]中南民族大学智能无线通信湖北省重点实验室,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2021年第2期171-176,共6页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418)。

摘　　要：采用射频磁控溅射方法制备了ZTGO透明导电氧化物薄膜,通过紫外-可见分光光度计和四探针仪的测试以及光学表征技术,研究了生长温度(T_(em))对样品光学、电学和光电综合性能的影响.结果表明,薄膜样品的性能参数与T_(em)值密切相关.当Tem为640 K时,样品的电导率为7.86×10^(2) S·cm^(-1)、光学带隙为3.48 eV、Urbach能最小为0.167 eV、可见光区平均透过率最高为84.61%、优良指数最大为0.423 S,具有最好的光电综合性能.The ZTGO transparent conductive oxide thin films were prepared by magnetron sputtering technique.The influences of growth temperature(Tem)on the optical,electrical and opto-electronic performance of the thin films were investigated by ultraviolet-visible spectrometer,four-point probe and optical characterization methods.The results show that the T_(em) significantly affects the electro-optical characteristics of thin films.When the T_(em) is at 640 K,the prepared thin film has the best opto-electronic performance,with the electrical conductivity of 7.86×10^(2) S·cm^(-1),the optical band-gap of 3.48 eV,the minimum Urbach energy of 0.167 eV,the highest average visible transmittance of 84.61%and the maximum figure of merit of 0.423 S.

关 键 词：磁控溅射 透明导电氧化物 薄膜 

分 类 号：TM914[电气工程—电力电子与电力传动]