Eu,Mg共掺GaN薄膜的结构和发光性能研究  被引量:7

Structural and Luminescent Properties of Eu,Mg Co-doped GaN

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作  者:李祥 马海 王晓丹[1] 陈飞飞[1] 曾雄辉[2] Li Xiang;Ma Hai;Wang Xiaodan;Chen Feifei;Zeng Xionghui(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区:[1]苏州科技大学数理学院江苏省微纳热流技术与能源应用重点实验室,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出  处:《稀有金属》2020年第11期1170-1176,共7页Chinese Journal of Rare Metals

基  金:江苏省自然科学基金项目(BK20191456);国家自然科学基金项目(61974158,61306004);江苏省十三五重点学科项目(20168765);江苏省研究生科研创新计划项目(KYCX19_2017);苏州科技大学研究生培养创新工程项目(SKCX18_Y11)资助。

摘  要:通过离子注入,将Eu和Mg共掺杂到金属有机化学气相沉积方法生长的GaN薄膜中,Mg的注入剂量保持为5×10^(13)cm^(-2),Eu的剂量依次为1×10^(14),5×10^(14)和1×10^(15)cm^(-2)。采用X射线衍射(XRD)、Raman散射和光致发光研究了样品的结构和发光特性。X射线衍射和Raman散射揭示了GaN:Eu样品和GaN:Eu,Mg样品内部的应力随Eu注入剂量变化展现出相同的变化趋势,在Eu注入剂量从1×10^(14)cm^(-2)提高到5×10^(14)cm^(-2)后会导致GaN晶格收缩,产生张应力;当Eu注入剂量从5×10^(14)cm^(-2)提高到1×10^(15)cm^(-2),会导致晶格膨胀,产生压应力。光致发光测试结果表明,GaN:Eu,Mg样品中Mg的存在能够减少Eu周围的本征缺陷,抑制黄光发射,增强GaN基质与Eu^(3+)之间的能量传递,导致与Eu相关的发射峰强度整体增强,且Mg的存在并不改变Eu相关的发光峰峰位,也没有引入新的发光峰。随着Eu/Mg剂量比的增加,发光强度增强倍数呈现先增加后减小的趋势,且在Eu/Mg剂量比为10∶1时,此时Eu发光得到最大程度的增强,为GaN:Eu发光强度的6.6倍。Eu and Mg were implanted into the GaN thin films grown by metal-organic chemical vapor deposition.Mg dose was kept as5×10^(13) cm^(-2),while Eu dose was 1×10^(14),5×10^(14) and 1×10^(15) cm^(-2).The structural and luminescent properties were investigated via X-ray diffraction(XRD),Raman and photoluminscence spectra.The results of X-ray diffraction and Raman scattering both consistently revealed that the stress inside the GaN:Eu sample and GaN:Eu,Mg sample had the same tendency to change with the Eu implantation dose.The implantation dose of Eu was increased from 1×10^(14) to 5×10^(14) cm^(-2),resulting in lattice contraction and tensile stress.The implantation dose of Eu was increased from 5×10^(14) to 1×10^(15) cm^(-2),resulting in lattice expansion and compressive stress.The results of photoluminescence indicated that the presence of Mg in GaN:Eu,Mg samples could reduce the intrinsic defects around Eu,decrease yellow light emission,and enhance the energy transfer between GaN matrix and Eu3+.The presence of Mg led to an overall enhancement of the Eu-related emission peak intensity,did not change the Eu-related luminescence peak position,and also did not introduce new luminescence peaks.With the increase of ratio of Eu dose to Mg dose,the enhancement factor of Eu luminescence intensity first increased and then decreased.The optimized Eu/Mg dose ratio was 10∶1 and Eu luminescence intensity was increased to 6.6 times of GaN:Eu.

关 键 词:光电子学 GaN 离子注入 光致发光 光学特性 

分 类 号:TN304[电子电信—物理电子学]

 

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