Structure,morphology and electrical resistance of W_(x)N thin film synthesized by HFCVD method with various N_(2) contents  

作　　者：Somayeh Asgary Mohammad Reza Hantehzadeh Mahmood Ghoranneviss Arash Boochani 

机构地区：[1]s.asgary,m.r.hantehzadeh,m.ghoranneviss*.1.boochaniplasmaphysics research center,science and research branch,islamic azad university,tehran 14665-678,iran [2]department of physics,kermanshah branchislamic azaduniversity,kermanshah 6718997551,iran

出　　处：《Rare Metals》2020年第12期1440-1448,共9页稀有金属（英文版）

摘　　要：Tungsten nitride(W_(x)N)thin films with good crystalline structure,high quality and relatively low resistivity were deposited by hot filament chemical vapor deposition(HFCVD)technique at different mixtures of N2 and Ar gases.Experimental data demonstrate that different N_(2) contents in gas mixture strongly affect microstructure,phase formation,texture morphology and resistivity of the W_(x)N films.According to X-ray diffraction(XRD)patterns,the growth of tungsten nitride films promotes δ-WN phase for lower N_(2) contents in gas mixture.At higher N_(2) contents,a phase transition is observed in the tungsten nitride films.Both hexagonal δ-WN and cubic β-W_(2)N phases coexist,and WN phase approximately disappears with N_(2) contents in the gas mixture increasing.Scanning electron microscope(SEM)images for deposited films at lower N_(2) contents in gas mixture indicate a definite dense columnar nanostructure.The electrical resistivity results exhibit a significant drop for the W_(x)N thin films with N_(2) contents in the mixed gas increasing.The changes in N_(2) content in gas mixture are found to be responsible for variation in the film resistivity values.Thus,the deposited tungsten nitride thin film at higher N_(2) contents in gas mixture has noncolumnar microstructure and lower resistivity,which may be used as a superior diffusion barrier.

关 键 词：Tungsten nitride Thin film HFCVD Electrical resistivity Diffusion barriers 

分 类 号：TQ136.13[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]