快速热退火对Pt/Dy_(2)O_(3)/Pt阻变特性的影响  

Resistive Switching Characteristics of Pt/Dy_(2)O_(3)/Pt Resistive Random Access Memory Devices with Different Rapid Thermal Annealing Process

作　　者：于军洋 赵鸿滨 陈小强 魏峰[1] Yu Junyang;Zhao Hongbin;Chen Xiaoqiang;Wei Feng(State Key Laboratory of Advanced Materials for Smart Sensing,GRINM Group Co.Ltd.,Beijing 100088,China;GRIM AT Engineering Institute Co.Ltd.,Beijing 101402,China;General Research Institute for Nonferrous Metals,Beijing 100088,China)

机构地区：[1]有研科技集团有限公司智能传感功能材料国家重点实验室,北京100088 [2]有研工程技术研究院有限公司,北京101402 [3]北京有色金属研究总院,北京100088

出　　处：《稀有金属》2020年第12期1286-1291,共6页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(51107005,51477012)资助

摘　　要：采用磁控溅射在Si/SiO_(2)衬底上制备了Pt/Dy_(2)O_(3)/Pt阻变器件(RRAM),研究并分析了快速热退火对Pt/Dy_(2)O_(3)/Pt器件阻变特性的影响。通过原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线光电子能谱分析(XPS)研究了快速热退火对Dy_(2)O_(3)薄膜表面形貌、薄膜结构和Dy、O化学价态的影响。通过对不同退火条件下Pt/Dy_(2)O_(3)/Pt器件的电学特性测试,研究了不同退火温度对器件阻变特性的影响。实验结果表明,退火增加了Pt/Dy_(2)O_(3)/Pt器件初始电阻值,增大了器件的开关比(Roff/Ron);降低了器件的操作电压提高了器件电阻转变一致性。XPS分析表明退火后薄膜表面氧含量升高,表面氧含量变化为非晶格氧含量的增加。能谱(EDS)扫描结果表明退火后Dy_(2)O_(3)表面增加的非晶格氧来源于器件制备过程中存在于Dy_(2)O_(3)薄膜缺陷处的氧在退火时被激活向表面扩散,表面氧的富集引起器件初始电阻升高,薄膜内部氧向表面迁移在薄膜内部产生新的氧空位,引起器件操作电压的降低。Pt/Dy_(2)O_(3)/Pt resistive random access memory(RRAM)devices were fabricated on the Si/SiO_(2)substrate through RF magnetron sputtering method.The effects of the rapid thermal annealing(RTA)process on the switching characteristics of the RRAM devices were investigated.Surface topography,crystal structure and the chemical states of Dy and O were clarified by atom force microscopy(AFM),transmission electron microscopy(TEM)and X-ray photoelectrons spectroscopy(XPS)measurements respectively.The results showed that the RTA process could increase the ratio of the low and high resistance states(Roff/Ron),lower the operate voltage,and improve the resistive switching uniformity.According to the XPS results,the oxygen content in the surface of Dy_(2)O_(3)film was increased after RTA process.Energy dispersive spectrometer(EDS)result showed the enrichment of the oxygen on the surface which led to the increase of the initial resistance,and the migration of the oxygen ions from the Dy_(2)O_(3)interior into the surface created oxygen vacancies behind which caused the decrease of the operate voltage.

关 键 词：氧化镝 阻变存储器(RRAM) 快速热退火 氧空位 

分 类 号：TN30[电子电信—物理电子学]