低温退火温度对硅晶圆内V-O_(2)对介观演变影响的仿真  

Simulation of Evolutional Effect of Low-temperature Annealing Temperature on V-O_(2) Pairs in Silicon Monocrystalline Wafer

作　　者：关小军[1] 关宇昕 王善文 GUAN Xiaojun;GUAN Yuxin;WANG Shanwen(School of Material Science and Engineering,Shandong University,Jinan 250061,China;Outpie Partners B.V.,High\|Tech Campus,Eindhoven 5656AE,Netherlands)

机构地区：[1]山东大学材料科学与工程学院,山东济南250061 [2]Outpie Partners B.V.高科技园区,埃因霍温荷兰5656AE

出　　处：《徐州工程学院学报（自然科学版）》2021年第1期1-6,共6页Journal of Xuzhou Institute of Technology(Natural Sciences Edition)

基　　金：山东大学晶体材料国家重点实验室开放课题(KF1303)。

摘　　要：为了揭示低温退火温度对硅晶圆内V-O_(2)对介观演变的影响,基于所建相场模型及其应用程序,对2个不同温度下退火的硅晶圆中V-O_(2)对演变过程进行了仿真.结果表明:当低温退火温度降低时,V-O_(2)对变化速率减慢、数量减少,这与相应的空位相对浓度演变及其均匀化过程有关.In order to reveal the effect of low-temperature annealing temperature on the evolution of V-O_(2) pairs in the silicon monocrystalline wafer during low-temperature annealing,the evolutional process of V-O_(2) pairs in two silicon wafers annealed at different temperatures was simulated based on the established phase field model and its application program.The results show that when the low-temperature annealing temperature decreases,the change rate of V-O_(2) pairs slows down and the number decreases,which is related to the evolution of the relative vacancy concentration and its homogenization process.

关 键 词：仿真 硅晶圆 V-O_(2)对 温度 低温退火 

分 类 号：TG111[金属学及工艺—物理冶金]