长线列CMOS图像传感器的性能优化设计  

Performance Optimization of Long Linear Array CMOS Image Sensor

作　　者：徐星[1] 陈永平[1] 陈世军[1] 袁红辉[1] 王欣[1] XU Xing;CHEN Yongping;CHEN Shijun;YUAN Honghui;WANG Xin(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences.Shanghai 200083,CHN)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《半导体光电》2021年第1期52-56,共5页Semiconductor Optoelectronics

摘　　要：设计了一种基于电容反馈跨阻放大器(CTIA)的长线列CMOS图像传感器。为减小器件功耗和面积,采用基于单端四管共源共栅运算放大器。为提高信号读出速率,采用没有体效应的PMOS源跟随器,同时减小PMOS管的宽长比,有效减小了输出总线寄生电容的影响。在版图设计上,采用顶层金属走线,降低寄生电阻和电容,提高了长线列CMOS图像传感器的读出速率和输出线性范围。采用0.35μm 3.3V标准CMOS工艺对传感器进行流片,得到器件像元阵列为5×1 030,像元尺寸为20μm×20μm。测试结果表明:该传感器在积分时间为1ms、读出速率为4MHz的情况下工作稳定,其线性度达到98%,线性动态范围为76dB。A kind of long linear array CMOS image sensor based on the capacitors transimpedance amplifier(CTIA)is designed.A single-ended four transistors cascade operational amplifier is employed for eliminating the power dissipation and area.In order to promote the signal readout ratio,a minimized PMOS source follower without body effect is designed.The effect of the parasitic capacitance of the output bus is reduced.On the layout,the top metal is used to reduce parasitic resistance and capacitance.The signal readout ratio and the linearity range are raised.The image sensor chip with the pixel array of 5×1 030 and the pixel size of 20μm×20μm is fabricated with 0.35μm standard CMOS process.Test results show that the image sensor works well when the integration time is 1 ms and the readout ratio is 4 MHz.The linearity can reach up to 98%and the linearity of dynamic range is 76 dB.

关 键 词：CMOS图像传感器 电容反馈跨阻放大器 体效应 读出速率 寄生电容 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]