Supported by the Shanghai Pujiang Program(18PJ1410700);Key Laboratory of Defense Technology Funding of Chinese Academy of Sciences(CXJJ-20S004);Innovation Program of Shanghai Institute of Technical Physics,Chinese Academy of Sciences(CX-268)。
提出了一种基于0.35μm高压CMOS工艺的线性雪崩光电二极管(Avalanche Photodiode,APD)。APD采用了横向分布的吸收区-电荷区-倍增区分离(Separate Absorption,Charge and Multiplication,SACM)的结构设计。横向SACM结构采用了高压CMOS工...
Supported by the National Natural Science Foundation of China(61474130,U1531109);the Natural Science Foundation of Shanghai(17142200100);Chinese Academy of Sciences via Hundred Talents Program