大规模电阻阵红外景象产生器件的像素设计研究  

Pixel design of large-scale resistor array infrared scene projector

作　　者：翟叼豪 陈永平[1] 翟厚明[1] 马斌[1] Zhai Diaohao;Chen Yongping;Zhai Houming;Ma Bin(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所、中国科学院红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与激光工程》2023年第10期11-20,共10页Infrared and Laser Engineering

基　　金：中国科学院创新基金项目(CX383)。

摘　　要：电阻阵作为一种动态红外景象产生器件,在红外半实物仿真领域有着重要的应用。电阻阵可实现的规模与性能与红外微辐射像素列阵的设计有着密切的关系。文中从应用系统对大规模电阻阵器件的要求出发,结合电阻阵的工作原理,提出了像素驱动电路与MEMS结构一体化的设计方案,设计了规模可拓展的高占空比像素结构。通过采用高消光系数材料以及光学谐振腔结构,微辐射元的中波红外和长波红外的表面发射率达0.7。热力学仿真表明,通过合理的薄膜厚度和结构设计,微辐射元阵列的占空比达到51%,升、降温的热响应时间均小于5 ms,0.6 mW功率驱动下应力翘曲小于300 nm,长波红外表观温度可达582 K,中波红外表观温度可达658 K。结合设计方案提出了工艺制备方案,并通过小阵列流片初步验证了设计方案的可行性。该设计研究为国产大规模、高占空比电阻阵的研制指明了方向。Objective As an infrared scene projector,the resistor array device played an important role in hardware-in-theloop infrared simulation system.Due to the emitted infrared image similar to the real target,it can generate dynamic infrared scene for infrared detectors.Usually,the scale of the infrared detector was 512×512 or 640×480,meaning the scale of the target simulator should be four times larger to ensure high-quality simulations,and developing a 1024×1024 scale resistor array device is necessary.The pixel design is the basis of resistor array and it determines the achievable scale and performance of the resistor array.Therefore,a pixel array that can be scalable to 1024×1024,can operate at 200 Hz,and has an apparent temperature close to 600 K must be achieved.For this purpose,a design scheme for integrating the pixel driving circuit and MEMS structure was proposed,and a scalable high-fill-factor pixel was designed in this paper.Methods A pixel circuit operating in snapshot mode was designed according to the functional requirements of the resistor array device(Fig.2).By investigating the design scheme for integrating the pixel driving circuit and MEMS structure,four key factors influencing the pixel performance were deduced,including fill factor,thermal conductance,heat capacity,and surface emissivity.Using the high extinction coefficient materials and an optical resonator structure,the surface emissivity of the micro emitter in mid-wave infrared and long-wave infrared reaches 0.7(Fig.5).Through proper film thickness design and geometric structure design,the fill factor of the micro emitter array reaches 51%(Fig.4).The thermodynamic simulation was used to assist the design of the micro emitter and evaluate its performance(Fig.6).A MEMS fabrication process was proposed to prepare pixel array sample(Fig.8).Results and Discussions The thermodynamic simulation results of the designed pixel show that the apparent temperature of mid-wave infrared and long-wave infrared at 0.6 mW power drive reaches 658 K and 582

关 键 词：电阻阵 红外仿真 微辐射元 红外表观温度 占空比 

分 类 号：V448.25[航空宇航科学与技术—飞行器设计]