CMOS探测器自适应信号读出技术研究  

Adaptive Signal Readout Technology for CMOS Detectors

作　　者：于得福 陈永平[2] 李向阳[2] YU Defu;CHEN Yongping;LI Xiangyang(School of Microelectronics,Shanghai University,Shanghai 201800,CHN;Key Lab.of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Science,Shanghai 200083,CHN)

机构地区：[1]上海大学微电子学院,上海201800 [2]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《半导体光电》2024年第1期36-41,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金重大项目(42192582)。

摘　　要：设计了一种根据光照强度自动调节增益的CMOS探测器,它能够在一帧时间内实现光照强度与积分增益自动适应,从而实现无论在弱光还是强光条件下CMOS探测器都能有适应的灵敏度和动态范围。相较于传统CTIA电路,自适应信号读出技术新增了比较器电路来控制CTIA积分电容大小,通过短曝光输出电压与参考阈值进行比较,输出信号结果用来调整长曝光积分增益,最终得到每个像素的输出电压和增益挡位。基于0.5μm 5 V-CMOS工艺进行了128×1线阵CMOS探测器设计仿真与流片,仿真结果表明,光电流在2 pA~100 nA六个数量级内分别自适应四个积分增益,都能有良好的信号读出。An adaptive CMOS detector that automatically adjusts gain based on light intensity was designed.The detector can automatically adjust the gain based on the intensity of light during integration,enabling adaptive sensitivity and dynamic range readouts in both low-light and high-light conditions.In this study,a new comparator circuit is introduced alongside the traditional CTIA circuit to control the size of the CTIA integration capacitor.By comparing the output voltage from short exposure with the reference threshold,the results are used to fine-tune the long exposure integration gain for each pixel.The design and simulation of a 128×1 linear array CMOS detector were conducted using 0.5 μm 5 V-CMOS technology.The simulation results demonstrate that the CMOS detector can adaptively adjust four different integration gains within a range of five orders of light intensity,covering photocurrents from 2 pA to 100 nA while maintaining excellent signal readout performance.

关 键 词：CMOS探测器 自适应技术 自动增益 长短曝光 

分 类 号：TN386.1[电子电信—物理电子学]