一种Si CMOS的Ka波段毫米波功率放大器  

Si CMOS Ka-band millimeter wave power amplifier

作　　者：陶李 田彤[1,2] TAO Li;TIAN Tong(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai 200050,China;University of Chinese Academy of Science,Beijing 100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院大学,北京100049

出　　处：《西安电子科技大学学报》2021年第2期190-196,共7页Journal of Xidian University

基　　金：四川省科技计划(2020YFSY0066)。

摘　　要：为了满足毫米波雷达或通信系统对更高发射功率的需求,基于65 nm Bulk Si CMOS工艺制程设计了一款Ka频段功率放大器。该功率放大器工作于30~32 GHz,采用了共源共栅差分对结构的两级放大单元,使用中和电容增强电路的稳定性,并以变压器为基础设计实现了片上无源阻抗匹配网络。经过测试,该功率放大器在工作频段内的最大输出功率为16.3 dBm。当功率放大器过驱动时,其最大功率附加效率为16.9%,-1 dB压缩点为13.2 dBm,功率增益为23.6 dB。这种功率放大器芯片在功率增益和芯片面积利用率方面具有优势,为硅基毫米波功率放大器提供了一种可行的高功率输出的设计实例。In order to meet the requirement of higher transmission power for the millimeter wave radar or communication system,a Ka band power amplifier is designed based on the 65 nm bulk Si CMOS process.This power amplifier works at 30~32 GHz,and consists of two-stage CASCODE differential pairs structure amplifiers.Neutralizing capacitances are used to enhance its stability,and the on chip matching network is realized based on transformer coils.After testing,the maximum output power of the power amplifier in the operating frequencies is 16.3 dBm.Its maximum PAE is 16.9%,-1 dB compression point is 13.2 dBm,and power gain is 23.6 dB.The power amplifier chip presented in this paper has advantages in power gain and chip area utilization,which provides a feasible high power output design example for the silicon-based millimeter wave power amplifier.

关 键 词：CMOS集成电路 毫米波 功率放大器 微波单片集成电路 

分 类 号：TN722.7[电子电信—电路与系统]