应变纤锌矿ZnSnN_(2)/In_(x)Ga_(1-x)N柱形量子点的光电转换效率  

Photoelectric Conversion Efficiency of Strained Wurtzite ZnSnN_(2)/In_(x)Ga_(1-x)N Cylindrical Quantum Dots

作　　者：陈其扬 石磊[1] 闫祖威[1] CHEN Qiyang;SHI Lei;YAN Zuwei(College of Science Amier Mongolia Agricultural University Hohhot 010018,China)

机构地区：[1]内蒙古农业大学理学院,呼和浩特010018

出　　处：《内蒙古大学学报（自然科学版）》2021年第2期129-135,共7页Journal of Inner Mongolia University：Natural Science Edition

基　　金：内蒙古自治区自然科学基金资助项目(2019MS01006,2020MS01008);内蒙古自治区高等学校科学研究项目(NJZY19047);内蒙古“草原英才”工程资助项目。

摘　　要：在有效质量近似下,通过变分法得到应变纤锌矿ZnSnN_(2)/In_(x)Ga_(1-x)N柱形量子点的带隙,进而利用细致平衡理论,研究了内建电场影响下柱形量子点的光电转换效率随量子点半径、高度和In组分的变化关系。结果表明:量子点的光电转换效率随着量子点半径、高度以及In组分的增加单调增加,并且内建电场会使得转换效率明显降低。Within the effective mass approximation, band gaps of strained wurtzite ZnSnN_(2)/In_(x)Ga_(1-x)N cylindrical quantum dots are calculated theoretically by a variational method.Furthermore, based on the detailed balance theory, the relationship between the photoelectric conversion efficiency of cylindrical quantum dots with the radius, height and In component under the influence of built-in electric field is studied.The results show that the photoelectric conversion efficiency of quantum dots increases monotonously with the increase of quantum dot radius, height and In component, and the built-in electric field can reduce the conversion efficiency significantly.

关 键 词：柱形量子点 内建电场 转换效率 

分 类 号：O471.3[理学—半导体物理]