基于紫外激光对硅基微通道刻蚀分析  

Analysis of silicon based microchannel etching based on ultraviolet laser

作　　者：单存良 梁庭 雷程[1,2] 王文涛 刘瑞芳[1,2] 李奇思 Shan Cunliang;Liang Ting;Lei Cheng;Wang Wentao;Liu Ruifang;Li Qisi(Shanxi Provincial Key Laboratory of Dynamic Testing Technology,Taiyuan 030051,China;Key Laboratory of Instrumentation Science Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051,China)

机构地区：[1]动态测试技术山西省重点实验室,太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《电子测量技术》2021年第2期170-175,共6页Electronic Measurement Technology

基　　金：山西省重点研发计划(201903D121123);山西省自然科学基金(201801D121157,201801D221203)项目资助。

摘　　要：紫外激光具有波长短、速度快、加工精度高、热影响区小以及无损加工等优点,针对紫外激光加工过程中,不同参数对刻蚀结果产生不同的影响,实验中通过控制单一变量法,设计了扫描速度、扫描次数、能量密度、重复频率、离焦量等不同参数对刻蚀结果的影响。实验结果表明,刻蚀宽度随能量密度的增加而增加,但是增加率不断降低;减小扫描速度,可以刻蚀出深度较深并且边缘工整的微通道;随着扫描次数的增大,激光刻蚀的深度不断增大,但增大率在不断的减小,刻蚀深度过深,激光将不会对沟道再进行刻蚀。实验中通过优化激光刻蚀参数,得到了刻蚀宽度为146μm、刻蚀深度为25.665μm、微通道边缘整齐,边缘粗糙度为7μm,沟道的垂直度将近90°的L型硅基微通道。Ultraviolet laser with a wavelength, high speed, high precision, small heat affected zone and nondestructive processing advantages, such as for ultraviolet laser machining process, the influence of different parameters on the etching results, by controlling the single variable method, designed the scanning speed, scanning frequency, energy density, repetition frequency, the coke deposition on the result of etching.The experimental results show that the etching width increases with the increase of energy density, but the increase rate decreases continuously.By reducing the scanning speed, the microchannel with deep depth and neat edge can be etched.With the increase of scanning times, the depth of laser etching is increasing, but the increase rate is decreasing, and the etching depth is too deep, so the laser will not etching the channel again.By optimizing the laser etching parameters, an L-shaped silicon-based micro-channel with an etching width of 146 μm, an etching depth of 25.665 μm, a neat edge and a roughness of 7 μm, and a channel with a verticality of nearly 90° were obtained.

关 键 词：紫外激光器 单一变量法 刻蚀宽度 刻蚀深度 L型硅基微通道 

分 类 号：TN405[电子电信—微电子学与固体电子学]