S波段低插损FBAR陷波器的研制  

Development of S Band FBAR Notch Filter with Low Insertion Loss

作　　者：蒋平英[1] 蒋世义[1] 何西良[1] 陈金琳 彭霄[1] 徐阳[1] 刘娅[1] JIANG Pingying;JIANG Shiyi;HE Xiliang;CHEN Jinlin;PENG Xiao;XU Yang;LIU Ya(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2021年第2期157-160,共4页Piezoelectrics & Acoustooptics

摘　　要：该文介绍了一种单端口、端口阻抗50Ω的S波段薄膜体声波谐振器(FBAR)陷波器,其采用了梯形拓扑结构与外围匹配电路相结合的方式。对FBAR陷波器芯片的设计过程、工艺实现进行了说明。测试制备的FBAR陷波器,其陷波频段为2399~2412 MHz,陷波抑制达35 dBc;通带频率分别为1800~2300 MHz和2500~2800 MHz,通带插损仅1 dB;3 dBc开口宽度为69 MHz。FBAR陷波器芯片尺寸为1.2 mm×1.2 mm×0.35 mm。结果表明,陷波器实测与仿真结果两者相吻合。An single port S band film bulk acoustic resonator(FBAR)notch filter with port impedance of 50Ωis introduced in this paper.The notch filter adopts the combination of the ladder topology FBAR and the peripheral matching circuits.The design method and processes of the FBAR notch filter chip were illustrated.The testing results show that the notch band of the prepared FBAR notch filter is 2399~2412 MHz,the notch rejection is up to 35 dBc,the pass band frequency is 1800~2300 MHz and 2500~2800 MHz respectively,the insertion loss of the pass band is only 1 dB and the bandwidth of 3 dBc is 69 MHz.The chip size of the FBAR notch filter is only 1.2 mm×1.2 mm×0.35 mm.The measured results and simulation results are consistent.

关 键 词：薄膜体声波谐振器(FBAR) 陷波器 芯片 梯形结构 低插损 

分 类 号：TN75[电子电信—电路与系统]