高动态位移ScAlN基超声换能器的设计及制作  

Design and Fabrication of ScAlN-Based Ultrasonic Transducer with High Dynamic Displacement

作　　者：彭火祥 苗斌[2] 徐瞻 刁莉娜 程晋荣[1] 李加东[2] 赵祥永 张巧珍 PENG Huoxiang;MIAO Bin;XU Zhan;DIAO Lina;CHENG Jinrong;LI Jiadong;ZHAO Xiangyong;ZHANG Qiaozhen(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China;Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,China;Mathematics and Science College,Shanghai Normal University,Shanghai 200234,China)

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]中国科学院苏州纳米技术与纳米仿生研究所多功能材料与轻巧系统重点实验室,江苏苏州215123 [3]中国科学技术大学纳米科学技术学院,江苏苏州215123 [4]上海师范大学数理学院,上海200234

出　　处：《压电与声光》2021年第2期183-186,191,共5页Piezoelectrics & Acoustooptics

摘　　要：超声探测作为重要的感知技术,其探测性能一直是学术界研究的热点。针对薄膜超声换能器谐振位移低,导致输出声压较低,从而影响探测性能的问题,该文提出了一种高动态位移的薄膜ScAlN基超声换能器结构,该结构直径为360μm,中心处膜层由4根悬梁支柱固支,通过微机电系统(MEMS)微纳加工技术制作了换能器阵列。测试结果表明,该器件谐振频率下,中心处动态位移可达2.16μm/V。此外,该结构使膜层振动模态转变为输出声压更高的活塞型模态,相关工作为空气介质中长距离超声测距传感器的研究奠定了基础。As an important sensing technology,the performance of the ultrasonic detection has been the focus of academic research.To solve the problem that the low resonant displacement of the thin film ultrasonic transducer leads to the low output sound pressure,which affects the detection performance,a thin film ScAlN-based ultrasonic transducer with high dynamic displacement is proposed in this paper.The diameter of the structure is 360μm,and the film layer at the center is fixed by four cantilever beams.The transducer array is fabricated by MEMS micro-nano machining technology.The test results show that the dynamic displacement at the center of the transducer can reach about 2.16μm/V at its resonant frequency.In addition,the proposed structure can transform the vibration mode of the film into the Piston mode with higher sound pressure.The related work lays a foundation for the research of the long-distance ultrasonic distance sensor in the air medium.

关 键 词：ScAlN薄膜 动态位移 新型pMUT结构 

分 类 号：TN384[电子电信—物理电子学] TB552[理学—物理]