调制型Au/Sn薄膜微观形貌及合金化工艺  

Microstructure Morphology and Alloying Process of Modulated Au/Sn Thin Films

作　　者：沓世我 李淑华 李保昌 罗俊尧 杨曌 Ta Shiwo;Li Shuhua;Li Baochang;Luo Junyao;Yang Zhao(Guangdong Fenghua Advanced Technology Holding Co.,Ltd.,Zhaoqing 526060,China;State Key Laboratory of Advanced Materials and Electronic Components,Zhaoqing 526060,China;School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]广东风华高新科技股份有限公司,广东肇庆526060 [2]新型电子元器件关键材料与工艺国家重点实验室,广东肇庆526060 [3]华南理工大学材料科学与工程学院,广州510641

出　　处：《微纳电子技术》2021年第3期264-270,共7页Micronanoelectronic Technology

摘　　要：采用Au和Sn单质金属靶,通过直流磁控溅射法制备调制型Au/Sn薄膜(薄膜层数为3~21),经快速退火后,实现单质多层薄膜的合金化。主要研究了Au/Sn薄膜微观形貌和合金化工艺控制。结果表明,当固定薄膜总厚度为2μm时,320℃下退火10min后,膜层表面粗糙度与薄膜层数呈反比。薄膜层数较少(n=3)、调制周期厚度较大时,由于Au与Sn间扩散不完全,合金化不充分,造成薄膜表面起伏较大,其均值粗糙度最高达到188.5nm。随着薄膜层数不断增加,调制周期厚度减小到纳米级,薄膜也更加致密、平整,n=21时,320℃下退火10min后均值粗糙度仅为29.7nm。优化合金化工艺过程中,采用了不同的优化方法,包括增加退火温度、延长保温时间、降低薄膜总厚度和调制周期,最终在膜层厚度为700nm、退火温度为320℃、退火时间为10min的工艺条件下,获得了表面致密平整、合金化充分及金锡质量比约为80∶20的合金薄膜,均值粗糙度仅为23.5nm。The Au and Sn single metal targets were used to prepare modulated Au/Sn thin films(the number of thin film layers is 3-21)by DC magnetron sputtering.After rapid annealing,the alloying of single substance multilayer thin films was realized.The microstructure morphology and alloying process control of the Au/Sn thin films were mainly studied.The results show that when the fixed total thickness of the thin film is 2μm,after annealing at 320℃for 10 min,the thin film surface roughness is inversely proportional to the number of thin film layers.When the number of thin film layers is small(n=3)and the modulation period thickness is larger,the diffusion between Au and Sn is not complete,and then the alloying is not sufficient,thus thin film surface fluctuates greatly and the mean maximum roughness is up to 188.5 nm.With the number of the thin films increases,the modulation period thickness reduces to nanoscale,and the thin film becomes denser and smoother.When n=21,the mean roughness is only 29.7 nm after annealing at 320℃for 10 min.During optimizing the alloying process,different optimization methods were used,including increasing the annealing temperature,extending the holding time,reducing the total thin film thickness and modulation period.Finally,under the process conditions of a thin film thickness of 700 nm,an annealing temperature of 320℃and annealing time of 10 min,an alloy thin film with a dense and smooth surface,sufficient alloying and a mass ratio of Au and Sn of about 80∶20 was obtained,the mean roughness is only 23.5 nm.

关 键 词：Au/Sn薄膜 磁控溅射 微观形貌 合金化 调制型 

分 类 号：O484.1[理学—固体物理]