集成电路铜互连线的静态腐蚀速率研究  

On State Etch Rate of Copper for Integrated Circuits

作　　者：张文倩 赵鹏 关晓丹 王同举 栾晓东 Zhang Wenqian;Zhao Peng;Guan Xiaodan;Wang Tongju;Luan Xiaodong(School of Electronic and Control Engineering,North China Institute of Aerospace Engineering,Langfang 065000,China;Department of Electronic Engineering,Jiangsu Ocean University,Lianyungang 222005,People’s Republic of China)

机构地区：[1]北华航天工业学院电子与控制工程学院,河北廊坊065000 [2]江苏海洋大学电子工程学院,江苏连云港222005

出　　处：《北华航天工业学院学报》2021年第1期8-11,共4页Journal of North China Institute of Aerospace Engineering

基　　金：河北省高等学校科学技术研究青年基金项目(QN2020102);北华航天工业学院基金项目(BKY-2018-03);北华航天工业学院课题(JY-2020-49);江苏省自然科学青年基金项目(BK20191005)。

摘　　要：利用静态腐蚀法分别研究了络合剂甘氨酸、氧化剂双氧水、阴离子表面活性剂十二烷基硫酸铵(ADS)、腐蚀抑制剂吡唑在碱性条件下对铜静态腐蚀速率的影响及作用机理。实验结果表明,在一定浓度范围内甘氨酸和双氧水的协同作用会加快Cu的静态腐蚀速率,而高氧化剂浓度会使得Cu表面形成氧化层钝化膜,抑制Cu腐蚀。活性剂ADS对Cu腐蚀有抑制作用,但抑制效果不如吡唑。通过调节吡唑浓度,可控制Cu静态腐蚀速率的大小,利于抛光液在实际使用中对去除速率进行优化与调配。This study investigates the effect of slurry composition(glycine as complexing, hydrogen peroxide as oxidant, ammonium dodecyl sulfate(ADS) as anionic surfactant, pyrazole as corrosion inhibitor, respectively) on the state etch rate of copper under alkaline condition by static corrosion method. Results show that the synergistic effect of glycine and hydrogen peroxide can accelerate the state etch rate of Cu within a certain concentration range, while high oxidant concentration causes formation of oxide passivation film to inhibit Cu corrosion. The surfactant ADS has an inhibitory effect on Cu, but the inhibitory effect is not as good as that of pyrazole. The state etch rate of Cu can be controlled by adjusting pyrazole concentration, which is conducive to optimize the removal rate in the actual use of slurry. By adjusting the pyrazole concentration, the static corrosion rate of Cu can be controlled, which is beneficial to the adjustment of the removal rate of the polishing liquid in actual use.

关 键 词：互连线铜 抛光液 抑制剂 静态腐蚀速率 

分 类 号：TN305.2[电子电信—物理电子学]