检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:张楠 宿晓慧[2] 郭靖 李强 Zhang Nan;Su Xiaohui;Guo Jing;Li Qiang(School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
机构地区:[1]中北大学仪器与电子学院,太原030051 [2]中国科学院微电子研究所,北京100029
出 处:《半导体技术》2021年第3期188-192,197,共6页Semiconductor Technology
基 金:国家自然科学基金资助项目(61604133)。
摘 要:在纳米锁存器中,由电荷共享效应导致的多节点翻转(MNU)正急剧增加,成为主要的可靠性问题之一。尽管现有的辐射加固锁存器能够对MNU进行较好的容错,但是这些加固锁存器只依赖于传统的冗余技术进行加固,需要非常大的硬件开销。基于辐射翻转机制(瞬态脉冲翻转极性)设计了一种新型抗MNU锁存器。该锁存器可有效减少需保护的节点数(敏感节点数)和晶体管数,因此可减少电路的硬件开销。由于至少存在2个节点可以保存正确的值,因此任何单节点翻转(SNU)和MNU都可以被恢复容错。基于TSMC 65 nm CMOS工艺进行仿真,结果显示,设计的加固锁存器的电路面积、传播延迟和动态功耗分别为19.44μm^(2),16.96 ps和0.91μW。与现有的辐射加固锁存器相比,设计的锁存器具有较小的硬件开销功耗-延迟-面积乘积(PDAP)值,仅为300.02。Multiple-node upsets(MNUs)induced by the charge sharing effect are increasing rapidly as one of the major reliability issues in nanometer latches.Although the existing hardened latches provide good tolerance for MNUs,the implementation of these hardened latches incurs in considerable hardware penalties,because they rely on conventional redundancy hardening techniques.Based on the radiation upset mechanism(the upset polarity of the transient pulse),a novel type of anti-MNU latch was designed.The proposed MNU tolerance latch can effectively reduce the number of nodes need to be protected(sensitive nodes),and the number of transistors,thus the hardware overhead of the circuit can be reduced.Any single node upset(SNU)and MNU can be recovered to fault tolerance,because at least two nodes can retain the values.The circuit was simulated based on TSMC 65 nm CMOS process.The results show that the circuit area,propagation delay and dynamic power consumption of the designed hardened latch are respectively 19.44μm^(2),16.96 ps and 0.91μW,so that it has the smaller power-delay-area product(PDAP)value(only 300.02)compared with existing hardened latches.
关 键 词:多节点翻转(MNU) 电荷共享 辐射加固 锁存器 容错
分 类 号:TN402[电子电信—微电子学与固体电子学] TN792
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.33