高压IGBT线性变窄场限环终端设计  

Design of a High Voltage IGBT Linear Narrowed Field Limiting Ring Termination

作　　者：叶枫叶 张大华 李伟邦 董长城 Ye Fengye;Zhang Dahua;Li Weibang;Dong Changcheng(NARI-GEIRI Semiconductor Co.,Ltd.,Nanjing 211100,China)

机构地区：[1]南瑞联研半导体有限责任公司,南京211100

出　　处：《半导体技术》2021年第3期223-228,共6页Semiconductor Technology

摘　　要：为使3300 V及以上电压等级绝缘栅双极型晶体管(IGBT)的工作结温达到150℃以上,设计了一种具有高结终端效率、结构简单且工艺可实现的线性变窄场限环(LNFLR)终端结构。采用TCAD软件对这种终端结构的击穿电压、电场分布和击穿电流等进行了仿真,调整环宽、环间距及线性变窄的公差值等结构参数以获得最优的电场分布,重点对比了高环掺杂浓度和低环掺杂浓度两种情况下LNFLR终端的阻断特性。仿真结果表明,低环掺杂浓度的LNFLR终端具有更高的击穿电压。进一步通过折中击穿电压和终端宽度,采用LNFLR终端的3300 V IGBT器件可以实现4500 V以上的终端耐压,而终端宽度只有700μm,相对于标准的场限环场板(FLRFP)终端缩小了50%。In order to realize the operating junction temperature of 3300 V and above voltage level insulated gate bipolar transistor(IGBT)is higher than 150℃,a linear narrowed field limiting ring(LNFLR)termination structure with high junction termination efficiency,simple structure and process-achievable was designed.The TCAD simulation software was used to simulate the breakdown voltage,electric field distribution and breakdown current of the termination structure.The structural parameters such as ring width,ring spacing and linear narrowing tolerance value were adjusted to obtain the optimal electric field distribution.The blocking characteristics of the LNFLR termination with high ring doping concentration and low ring doping concentration were emphatically compared.The simulation results show that the LNFLR termination with low ring doping concentration has a higher breakdown voltage.Furthermore,by compromising breakdown voltage and termination width,the new LNFLR termination of 3300 V IGBT can achieve a breakdown voltage of above 4500 V,and the termination width is only 700μm,which is 50%smaller than that of the standard field limiting ring and field plate(FLRFP)termination.

关 键 词：高压绝缘栅双极型晶体管(IGBT) 终端结构 线性变窄场限环(LNFLR) 场限环场板(FLRFP) 击穿电压 电场分布 

分 类 号：TN322.8[电子电信—物理电子学]