基于TSV转接板的3D SRAM单粒子多位翻转效应  

Single Event Multiple Bit Upset Effect of 3D SRAM Based on TSV Interposer

作　　者：王荣伟 范国芳 李博[2,3] 刘凡宇[2,3] Wang Rongwei;Fan Guofang;Li Bo;Liu Fanyu(Key Laboratory of All-Optical Network and Advanced Telecommunication Network Ministry of Education,Institute of Lightwave Technology,Beijing Jiaotong University,Beijing 100044,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]北京交通大学光波技术研究所全光网络与现代通信网教育部重点实验室,北京100044 [2]中国科学院微电子研究所,北京100029 [3]中国科学院硅器件技术重点实验室,北京100029

出　　处：《半导体技术》2021年第3期229-235,254,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(11905287,61874135,62011530040)。

摘　　要：为了研究硅通孔(TSV)转接板及重离子种类和能量对3D静态随机存储器(SRAM)单粒子多位翻转(MBU)效应的影响,建立了基于TSV转接板的2层堆叠3D封装SRAM模型,并选取6组相同线性能量传递(LET)值、不同能量的离子(^(11)B与^4He、^(28)Si与^(19)F、^(58)Ni与^(27)Si、^(86)Kr与^(40)Ca、^(107)Ag与^(74)Ge、^(181)Ta与^(132)Xe)进行蒙特卡洛仿真。结果表明,对于2层堆叠的TSV 3D封装SRAM,低能离子入射时,在Si路径下,下堆叠层SRAM多位翻转率比上堆叠层高,在TSV(Cu)路径下,下堆叠层SRAM多位翻转率比Si路径下更大;具有相同LET值的高能离子产生的影响较小。相比2D SRAM,在空间辐射环境中使用基于TSV转接板技术的3D封装SRAM时,需要进行更严格的评估。In order to study the effects of the through silicon via(TSV)interposer and heavy ion species and energies on single event multiple bit upset(MBU)effect of 3 D static random access memory(SRAM),a two-die stacked 3 D package SRAM model based on the TSV interposer was constructed.Six groups of ions with the same linear energy transfer(LET)values and different energies(^(11)B and ^(4)He,^(28)Si and ^(19)F,^(58)Ni and ^(27)Si,^(86)Kr and ^(40)Ca,^(107)Ag and ^(74)Ge,^(181)Ta and ^(132)Xe)were selected for Monte Carlo simulations.The results show that for the two-die stacked TSV 3 D package SRAM,when the low energy ions are incident,in the Si path,the MBU rate of the SRAM in the lower stack die is higher than that in the upper stack die;and in the TSV(Cu)path,the MBU rate of the SRAM in the lower stack die is higher than that in the Si die.The influence of high energy ions with the same LET value is less.Compared with 2 D SRAM,3 D package SRAM based on TSV interposer technology needs to be evaluated more strictly in space radiation environment.

关 键 词：硅通孔(TSV)转接板 三维静态随机存储器(SRAM) 单粒子翻转(SEU) 重离子 多位翻转(MBU) Geant4软件 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]