DND@CeO_(2)核壳型磨料的制备及其在蓝宝石表面的抛光机理研究  

Preparation of DND@CeO_(2) Core-Shell Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Wafers

作　　者：周晨 许向阳[1,2] 林顺天 姚云飞 ZHOU Chen;XU Xiang-yang;LIN Shun-tian;YAO Yun-fei(School of Minerals Processing and Bioengineering,Central South University,Changsha 410083,Hunan,China;Key Laboratory of Mineral Materials and Application of Hunan Province,Changsha 410083,Hunan,China)

机构地区：[1]中南大学资源加工与生物工程学院,湖南长沙410083 [2]矿物材料及其应用湖南省重点实验室,湖南长沙410083

出　　处：《矿冶工程》2021年第2期115-120,共6页Mining and Metallurgical Engineering

基　　金：矿物材料及其应用湖南省重点实验室开放课题(MMA201701)。

摘　　要：采用原位化学沉淀法,将氧化铈(CeO_(2))包覆于爆轰纳米金刚石(DND)颗粒上,制得DND@CeO_(2)复合磨料。复合磨料的最佳抛光工艺参数为:抛光压力4 kg、抛光盘转速120 r/min、抛光液流量70 mL/min、抛光液质量浓度1%、抛光液pH=10,此条件下复合磨料最大材料去除率可达73.26 nm/min,且抛光后的蓝宝石表面粗糙度可达4.47 nm,较CeO_(2)(粗糙度17.21 nm)和DND磨料(粗糙度24.1 nm)更优。分析抛光机理可知,复合磨料抛光性能的改善归因于蓝宝石表面与CeO_(2)发生了固相化学反应,形成较软的变质层,而DND可有效去除此反应层。By in-situ chemical precipitating ceria(CeO_(2))on detonation nanodiamond(DND)clusters,DND@CeO_(2) composite abrasives were prepared.The polishing parameters of composite abrasives were optimized as follows:polishing pressure of 4 kg,rotating speed of 120 r/min,slurry supplying rate of 70 mL/min,abrasive content of 1%and pH value of 10.It is shown that the maximum removal rate of composite abrasives reaches 73.26 nm/min,and the surface roughness of polished sapphire attains 4.47 nm,which is remarkably better than that of CeO_(2)(17.21 nm)and DND abrasives(24.1 nm).Based on the polishing mechanism analysis,it can be known that the improvement of the polishing performance of composite abrasives is attributed to the solid-phase chemical reaction between sapphire and CeO_(2),leading to the formation of a softer metamorphic layer on sapphire,which can be effectively and efficiently removed by DND particles.

关 键 词：复合磨料 纳米金刚石 氧化铈 化学机械抛光 蓝宝石 抛光磨料 

分 类 号：TG732[金属学及工艺—刀具与模具]