VO_(2)/GaAs异质结的制备及其光电特性研究  

Study on preparation of VO_(2)/GaAs heterojunction and its optical and electrical properties

作　　者：李军显 李毅[1,2] 周建忠[1] 田蓉 刘进 LI Junxian;LI Yi;ZHOU Jianzhong;TIAN Rong;LIU Jin(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Key Laboratory of Modern Optical System,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]上海理工大学上海市现代光学系统重点实验室,上海200093

出　　处：《光学仪器》2021年第2期48-54,共7页Optical Instruments

基　　金：国家高技术研究发展计划(863计划)(2006AA03Z348);教育部科学技术研究重点项目(207033);上海市科学技术委员会科技攻关计划(06DZ11415);上海市教育委员会科技创新重点项目(10ZZ94);上海领军人才培养计划资助项目(2011-026)。

摘　　要：采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_(2)/p-GaAs异质结,研究了不同退火温度和退火时间对VO_(2)/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_(2)薄膜,相变前后电阻变化约2个数量级。VO_(2)/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_(2)相变特性的异质结光电器件的设计与应用提供了可行性。n-VO_(2)/p-GaAs heterojunctions were successfully prepared on a p-type GaAs single crystal substrates using a DC magnetron sputtering and post-annealing process.The effects of different annealing temperatures and annealing times on the properties of the VO_(2)/GaAs heterojunctions were investigated and their crystalline orientation,chemical components,film quality,and optoelectronic properties were analyzed.The results show that we can obtain the best VO_(2) film with phase transition performance for annealing time 2 hours at annealing temperature 693 K,and the resistance change before and after phase transition is about 2 orders of magnitude.VO_(2)/GaAs heterojunctions have excellent rectifying characteristics at 308 K,318 K,328 K and corresponding threshold jump voltages of 6.9 V,6.6 V and 6.2 V,respectively.The results provide feasibility for the design and application of heterojunction devices based on VO_(2) phase transition characteristics.

关 键 词：VO_(2) GAAS 半导体−金属相变 异质结 整流特性 

分 类 号：TN301.1[电子电信—物理电子学]