齐纳二极管早期失效对芯片可靠性的影响分析  

Analysis of Influence of Early Failure of Zener Diodes on Chip Reliability

作　　者：黄炜[1] 邹奇峰 HUANG Wei;ZOU Qifeng(The 24th Research Institute of CETC,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《电子产品可靠性与环境试验》2021年第2期53-56,共4页Electronic Product Reliability and Environmental Testing

摘　　要：齐纳二极管常作为基准电压元件,为电路提供线性稳压电源,该固定电压与电源电压、负载和时间变化等无关,因而被广泛地应用于集成电路产品设计中。针对模拟集成电路早期失效案例进行分析,通过失效分析方法,定位该故障是由于齐纳二极管经历一定温度、时间的老炼试验后,表现出早期失效,击穿电压漂移所导致的;同时通过样品在不同条件下的试验情况,分析温度、电应力对齐纳二极管早期失效及产品可靠性的影响,并提出了选用齐纳二极管时的注意事项。Zener diodes is often used as a reference voltage element to provide a linear voltage regulator for the circuit,and the voltage has nothing to do with power supply voltage,load and time variation,so it is widely used in IC design.The early failure cases of analog integrated circuits are analyzed.Through the failure analysis method,it is found that the failure is caused by the early failure and breakdown voltage drift of zener diode after a certain temperature and time of burn-in test.At the same time,the effects of temperature and electrical stress on the early failure of zener diodes and product reliability are analyzed through the test conditions of samples under different conditions,and the precautions for choosing zener diodes are put forward.

关 键 词：齐纳二极管 早期失效 失效分析 可靠性 

分 类 号：TN432[电子电信—微电子学与固体电子学]