异质诱导酞菁锌有机薄膜晶体管的蒸镀工艺  

Evaporation Process of Heterogeneous Induced Zinc Phthalocyanine for Organic Thin Film Transistor

作　　者：董金鹏 孙强 李桂娟 苏和平 王璐 朱阳阳 王丽娟[1] DONG Jin-peng;SUN Qiang;LI Gui-juan;SU He-ping;WANG Lu;ZHU Yang-yang;WANG Li-juan(College of Chemical Engineering,Changchun University of Technology,Changchun 130012,China;Hainan Vocational University of Science and Technology,Haikou 571126,China)

机构地区：[1]长春工业大学化学工程学院,吉林长春130012 [2]海南科技职业大学,海南海口571126

出　　处：《发光学报》2021年第5期700-707,共8页Chinese Journal of Luminescence

基　　金：吉林省大学生创新创业训练计划项目(202010190106);吉林省科技厅重点攻关项目(20200403146SF);吉林省教育厅项目(JJKH20200682KJ)资助。

摘　　要：通过调控对六联苯(p-6P)诱导层和酞菁锌(ZnPc)蒸镀工艺条件,研究了有机半导体小分子的结晶生长成膜与ZnPc有机薄膜晶体管(OTFT)器件电性能的关系。结果表明,p-6P在180~190℃较高的衬底生长温度和3~4 nm的生长厚度下能够形成更大的结晶畴以及对二氧化硅衬底表面更好的覆盖,有利于诱导ZnPc小分子的结晶生长,使晶畴的排列更加有序。同时通过X射线衍射分析晶体结构,结果表明p-6P衬底温度的升高会明显提高ZnPc薄膜的结晶性。电性能研究发现,ZnPc蒸镀厚度的增加会显著提高器件的饱和电流和迁移率,在异质诱导条件下,p-6P薄膜厚度为3 nm、ZnPc蒸镀厚度为20 nm时,器件的饱和电流为1.08×10^(-6) A,迁移率为1.66×10^(-2) cm ^(2)·V^(-1)·s^(-1)。By adjusting the para-hexabiphenyl(p-6P)induction layer and zinc phthalocyanine(ZnPc)evaporation process conditions,the relationship between the crystal growth of organic semiconductor small molecules and the electrical properties of ZnPc OTFT devices was studied.The results showed that p-6P films can form larger crystal domains and better surface coverage on silicon dioxide substrate under the substrate growth temperature of 180^(-1)90℃and the growth thickness of 3-4 nm.This was beneficial to induce the crystal growth of ZnPc molecules and make the arrangement of the crystal domains more orderly.At the same time,the crystal structure was analyzed by X-ray diffraction.The results showed that the rise in temperature of the p-6P substrate would significantly improve the crystallinity of the ZnPc films.Combined with the study of electrical properties,the increase of ZnPc vapor deposition thickness will significantly increase the saturation current and device mobility of the device.Under heterogeneous induction conditions,when the p-6P film thickness is 3 nm and the ZnPc film thickness is 20 nm,the saturation current of the device is 1.08×10^(-6) A,and the mobility is 1.66×10^(-2) cm ^(2)·V^(-1)·s^(-1).

关 键 词：p-6P 酞菁锌(ZnPc) 薄膜生长 有机薄膜晶体管(OTFT) 电性能 

分 类 号：TN321[电子电信—物理电子学]