Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors  

作　　者：Hao Zou Lin-An Yang Xiao-Hua Ma Yue Hao 邹浩;杨林安;马晓华;郝跃(The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]The State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2021年第4期166-172,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61674117 and 61974108);the State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology of Xidian University,China。

摘　　要：The effects of various notch structures on direct current(DC) and radio frequency(RF) performances of AlGaN/GaN high electron mobility transistors(HEMTs) are analyzed.The AlGaN/GaN HEMTs,each with a 0.8-μm gate length,50-μm gate width,and 3-μm source-drain distance in various notch structures at the AlGaN/GaN barrier layer,are manufactured to achieve the desired DC and RF characteristics.The maximum drain current(I_(ds,max)),pinch-off voltage(V_(th)),maximum transconductance(gm),gate voltage swing(GVS),subthreshold current,gate leakage current,pulsed I-V characteristics,breakdown voltage,cut-off frequency(f_(T)),and maximum oscillation frequency(f_(max)) are investigated.The results show that the double-notch structure HEMT has a 30% improvement of gate voltage swing,a 42.2% improvement of breakdown voltage,and a 9% improvement of cut-off frequency compared with the conventional HEMT.The notch structure also has a good suppression of the current collapse.

关 键 词：ALGAN/GAN high electron mobility transistors(HEMTs) barrier layer NOTCH 

分 类 号：TN386[电子电信—物理电子学]