Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit  

作　　者：Baoxing Duan Xin Huang Haitao Song Yandong Wang Yintang Yang 段宝兴;黄鑫;宋海涛;王彦东;杨银堂(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2021年第4期605-609,共5页中国物理B（英文版）

基　　金：Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017);the 111 Project(Grant No.B12026)。

摘　　要：A novel silicon carbide(SiC) on silicon(Si) heterojunction lateral double-diffused metal-oxide semiconductor fieldeffect transistor with p-type buried layer(PBL Si/SiC LDMOS) is proposed in this paper for the first time.The heterojunction has breakdown point transfer(BPT) characteristics,and the BPT terminal technology is used to increase the breakdown voltage(BV) of Si/SiC LDMOS with the deep drain region.In order to further optimize the surface lateral electric field distribution of Si/SiC LDMOS with the deep drain region,the p-type buried layer is introduced in PBL Si/SiC LDMOS.The vertical electric field is optimized by Si/SiC heterojunction and the surface lateral electric field is optimized by the p-type buried layer,which greatly improves the BV of device and alleviates the relationship between BV and specific on-resistance(R_(on,sp)).Through TCAD simulation,when the drift region length is 20 μm,the BV is significantly improved from 249 V for the conventional Si LDMOS to 440 V for PBL Si/SiC LDMOS,increased by 77%;And the BV is improved from 384 V for Si/SiC LDMOS with the deep drain region to 440 V for the proposed structure,increased by 15%.The figure-of-merit(FOM) of the Si/SiC LDMOS with the deep drain region and PBL Si/SiC LDMOS are 4.26 MW/cm^(2) and 6.37 MW/cm^(2),respectively.For the PBL Si/SiC LDMOS with the drift length of 20 μm,the maximum FOM is 6.86 MW/cm^(2).The PBL Si/SiC LDMOS breaks conventional silicon limit.

关 键 词：Si/SiC heterojunction LDMOS breakdown voltage specific on-resistance 

分 类 号：TN386.1[电子电信—物理电子学]