Recent progress of physical failure analysis of GaN HEMTs  

作　　者：Xiaolong Cai Chenglin Du Zixuan Sun Ran Ye Haijun Liu Yu Zhang Xiangyang Duan and Hai Lu 

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 China [2]Architecture Team,Wireless Product Planning Department,ZTE Corporation,Nanjing 210012,China [3]State Key Laboratory of Mobile Network and Mobile Multimedia Technology,Shenzhen 518057,China

出　　处：《Journal of Semiconductors》2021年第5期48-59,共12页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China (No. 2017YFB0403000)。

摘　　要：Gallium nitride(GaN)-based high-electron mobility transistors(HEMTs) are widely used in high power and high frequency application fields, due to the outstanding physical and chemical properties of the GaN material. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations. In this paper, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed.

关 键 词：GAN high electron mobility transistors physical analysis failure mechanism 

分 类 号：TN386[电子电信—物理电子学]