VHF 600 W GaN功率模块研制  

Research and Manufacture of the VHF 600 W GaN Power Amplifier Module

作　　者：王建浩[1] 刘雪[1] 王琪 戈硕 唐厚鹭 WANG Jianhao;LIU Xue;WANG Qi;GE Shuo;TANG Houlu(Nanjing Electronic Device Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2021年第5期52-55,共4页Electronics & Packaging

摘　　要：设计了一种基于GaN HEMT的功率放大模块。该模块采用高增益的GaAs单片、GaN小功率管和GaN大功率管三级级联形式。测试结果表明,模块在约220~270 MHz、工作电压46 V、工作脉宽3 ms、工作比30%的条件下,全带内600 W输出,附加效率大于75%,增益大于52 d B。This article designs a power amplifier module based on GaN HEMT device.The module multi-stage cascade form is composed of a high-gain GaAs monolithic,low-power GaN devices and high-power GaN devices.The results showed that the device presented good performances of output power more than 600 W,more than 75%added efficiency,more than 52 d B power gain in the band of 220-270 MHz under the conditions of 46 V working voltage,3 ms pulse width and 30%duty cycle.

关 键 词：GaN功率管 VHF 功率放大模块 长脉宽 高增益 大功率 

分 类 号：TN402[电子电信—微电子学与固体电子学]