氧化钨薄膜对发光二极管特性的影响研究  

Research on the influence of WO film on the characteristics of light-emitting diodes

作　　者：肖和平 朱志佳 XIAO He-ping;ZHU Zhi-jia(HC SemiTek Corporation Co.Ltd,Jiangsu Soochow 215600,China)

机构地区：[1]华灿光电(苏州)有限公司,江苏苏州215600

出　　处：《光电子．激光》2021年第4期344-348,共5页Journal of Optoelectronics·Laser

摘　　要：氧化钨薄膜具有适中的光学带隙、折射率及高功函数等半导体特性,本文采用溅射法(Sputtering)制备氧化钨薄膜测试其光电特性,使用AFM、XRD观察薄膜外观结构与晶体状态,应用XPS、UPS表征薄膜的化学计量组分及薄膜功函数,并将此薄膜应用于AlGaInP发光二极管器件中,以增加与p-GaP欧姆接触特性,增加载流子注入效率;测试结果表明:采用合适厚度的氧化钨虚设层与ITO形成的复合膜层可有效增加电子注入效率,使AlGaInP发光二极管的出光强度提高4%,同时正向电压降低0.01V。The WO3 film has moderate optical band gap,refractive index and high work function and other semiconductor characteristics.In this paper,sputtering is used to prepare the WO3 film to test its optical and electrical properties,and the appearance structure and crystal state of the film are observed using AFM and XRD.XPS and UPS characterize the stoichiometric composition and work function of the film,and apply WO3 film to AlGaInP light-emitting diode devices to increase the ohmic contact characteristics with p-GaP and increase the carrier injection efficiency;the test results show that:The composite film formed by the thick WO3 film dummy layer and ITO can effectively increase the electron injection efficiency,increase the light intensity of the AlGaInP light-emitting diode by 4%,and reduce the forward voltage by 0.01 V.

关 键 词：氧化钨 函数等 ALGAINP发光二极管 出光效率 

分 类 号：TP273.2[自动化与计算机技术—检测技术与自动化装置]