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作 者:张自力 金洙吉[1] 慕卿 杨辉鹏 韩晓龙 ZHANG Zili;JIN Zhuji;MU Qing;YANG Huipeng;HAN Xiaolong(Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, Liaoning, China)
机构地区:[1]大连理工大学,精密与特种加工教育部重点实验室,辽宁大连116024
出 处:《金刚石与磨料磨具工程》2021年第2期82-88,共7页Diamond & Abrasives Engineering
基 金:国家重点研发计划(2016YFB1102205);国家自然科学基金面上项目(51775084)。
摘 要:钇铝石榴石(YAG)晶体由于其优异的物理化学和光学性能,广泛用作激光器的激光增益介质。然而,目前的加工方法很难满足YAG晶体的高效高质量加工。基于传统硅溶胶抛光液的抛光机理,配制一种化学机械抛光液,并通过正交试验优化化学机械抛光液的成分配比。使用优化后的抛光液抛光YAG晶体,其化学机械抛光材料去除率提升至34 nm/min,抛光后YAG晶体表面粗糙度为0.5 nm。相比于传统硅溶胶抛光液,新型抛光液的抛光效率提升240%,抛光工件的表面粗糙度降低17%。同时,通过对比抛光液性能提出化学机械抛光界面的相互作用模式对材料去除率的影响原因。Yttrium aluminum garnet(YAG)crystal is widely used as gain medium in laser device due to its excellent physical,chemical and optical properties.However,current process can hardly satisfy the requirements of high efficiency and high quality in YAG crystal processing.Based on the material remove mechanism of silica sol,new slurry for chemical mechanical polishing(CMP)of YAG crystal was invented,and its composition was optimized by orthogonal experiment.The material removal rate of CMP was increased to 34 nm/min,and the surface roughness of YAG crystal was 0.5 nm after the CMP process by using the proposed slurry.Compared with the traditional silicon sol,the new slurry improves the polishing efficiency by 240%and reduces the surface roughness by 17%.After comparing the performances of both slurries,the effect of interacting mode at CMP surface on material removal mechanism is proposed.
关 键 词:钇铝石榴石(YAG) 正交试验 化学机械抛光 材料去除机理 化学反应
分 类 号:TG73[金属学及工艺—刀具与模具] TH162[机械工程—机械制造及自动化]
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