一种基于MEMS体硅工艺的三维集成T/R模块  

A 3D Integrated T/R Module with Bulk Silicon MEMS Technology

作　　者：王清源 吴洪江[1] 赵宇[1] 赵永志[1] Wang Qingyuan;Wu Hongjiang;Zhao Yu;Zhao Yongzhi(The 13^(th)Research Institu te,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第4期300-304,336,共6页Semiconductor Technology

摘　　要：采用微电子机械系统(MEMS)体硅三维异构集成技术,设计了一种应用于雷达的四通道瓦片式三维集成T/R模块。该模块由三层硅基封装堆叠而成,每层硅基封装内部腔体异构集成多个单片微波集成电路(MMIC),内部采用硅通孔(TSV)实现互连,层间通过焊球互连。模块最终尺寸为8 mm×8 mm×3.5 mm。装配完成后对该模块进行测试,测试结果表明,在34~36 GHz内,模块的饱和发射功率为21 dBm,单通道发射增益达到21 dB,接收增益为23 dB,接收噪声系数小于3.5 dB,同时具备6 bit数控移相和5 bit数控衰减等功能。该模块在4个通道高密度集成的基础上实现了较高的性能。With bulk silicon micro-electromechanical system( MEMS) 3 D heterogeneous integration technology,a 3 D integrated four-channel tiled T/R module applied to radar was designed. The module was stacked by three layers of silicon-based packaging. The internal cavity of each silicon-based packaging was heterogeneously integrated with multiple monolithic microwave integrated circuits( MMICs) and connected to each other with through silicon vias( TSVs). Solder balls were used to realize the interconnection between the layers. The dimension of the module is 8 mm × 8 mm × 3. 5 mm. The module was tested after assembling. The test results show that within 34-36 GHz,the saturated transmitting power of the module is 21 dBm,the single channel transmitting gain reaches 21 d B,the receiving gain is 23 dB,and the receiving noise figure is less than 3. 5 dB. Meanwhile,it has 6 bit digital control phase shift,5 bit digital control attenuation and other functions. The module achieves high performance on the basis of high density integration of four channels.

关 键 词：微系统 微电子机械系统(MEMS)体硅工艺 T/R前端 三维异构集成 硅通孔(TSV) 

分 类 号：TN838[电子电信—信息与通信工程] TN851